WST2011 Dual P-kanal -20V -3.2A SOT-23-6L WINSOK MOSFET
Umumiy tavsif
WST2011 MOSFETlar eng ilg'or P-ch tranzistorlari bo'lib, ular tengsiz hujayra zichligiga ega. Ular kam RDSON va eshik zaryadi bilan ajoyib ishlashni taklif qiladi, bu ularni kichik quvvatni almashtirish va yukni o'zgartirish ilovalari uchun ideal qiladi. Bundan tashqari, WST2011 RoHS va Green Product standartlariga javob beradi va to'liq funksiyali ishonchlilik tasdiqiga ega.
Xususiyatlari
Kengaytirilgan Trench texnologiyasi hujayra zichligini oshirishga imkon beradi, natijada Super Low Gate zaryadiga ega yashil qurilma va CdV/dt effekti juda yaxshi pasayadi.
Ilovalar
Yuqori chastotali yuklanish nuqtasi sinxron kichik quvvat kommutatsiyasi MB/NB/UMPC/VGA, tarmoq DC-DC quvvat tizimlari, yuk kalitlari, elektron sigaretalar, kontrollerlar, raqamli mahsulotlar, kichik maishiy texnika va maishiy elektronikada foydalanish uchun javob beradi. .
tegishli material raqami
FDC634P, VISHAY Si3443DDV, NXP PMDT670UPE,
Muhim parametrlar
| Belgi | Parametr | Reyting | Birliklar | |
| 10s | Barqaror holat | |||
| VDS | Drenaj manbai kuchlanishi | -20 | V | |
| VGS | Darvoza manba kuchlanishi | ±12 | V | |
| ID@TA=25℃ | Uzluksiz drenaj oqimi, VGS @ -4.5V1 | -3.6 | -3.2 | A |
| ID@TA=70℃ | Uzluksiz drenaj oqimi, VGS @ -4.5V1 | -2.6 | -2.4 | A |
| IDM | Impulsli drenaj oqimi2 | -12 | A | |
| PD@TA=25℃ | Umumiy quvvat sarfi3 | 1.7 | 1.4 | W |
| PD@TA=70℃ | Umumiy quvvat sarfi3 | 1.2 | 0,9 | W |
| TSTG | Saqlash harorati oralig'i | -55 dan 150 gacha | ℃ | |
| TJ | Ishlash birlashmasining harorat diapazoni | -55 dan 150 gacha | ℃ | |
| Belgi | Parametr | Shartlar | Min. | Tip. | Maks. | Birlik |
| BVDSS | Drenaj manbasining buzilishi kuchlanishi | VGS=0V , ID=-250uA | -20 | --- | --- | V |
| △BVDSS/△TJ | BVDSS harorat koeffitsienti | 25℃ ga havola, ID=-1mA | --- | -0,011 | --- | V/℃ |
| RDS(ON) | Statik drenaj manbai - qarshilik 2 | VGS=-4,5V , ID=-2A | --- | 80 | 85 | mŌ |
| VGS=-2,5V , ID=-1A | --- | 95 | 115 | |||
| VGS(th) | Eshik chegarasi kuchlanishi | VGS=VDS , ID =-250uA | -0,5 | -1,0 | -1,5 | V |
| △VGS(th) | VGS(th) harorat koeffitsienti | --- | 3.95 | --- | mV/℃ | |
| IDSS | Drenaj manbasining qochqin oqimi | VDS=-16V , VGS=0V , TJ=25℃ | --- | --- | -1 | uA |
| VDS=-16V , VGS=0V , TJ=55℃ | --- | --- | -5 | |||
| IGSS | Darvoza manbasining qochqin oqimi | VGS=±12V , VDS=0V | --- | --- | ±100 | nA |
| gfs | Oldinga o'tkazuvchanlik | VDS=-5V, ID=-2A | --- | 8.5 | --- | S |
| Qg | Darvozaning umumiy zaryadi (-4,5V) | VDS=-15V , VGS=-4.5V , ID=-2A | --- | 3.3 | 11.3 | nC |
| Qgs | Gate-Source to'lovi | --- | 1.1 | 1.7 | ||
| Qgd | Darvoza-Drenaj zaryadi | --- | 1.1 | 2.9 | ||
| Td(yoqilgan) | Kechikish vaqti | VDD=-15V , VGS=-4.5V , RG=3,3Ō, ID=-2A | --- | 7.2 | --- | ns |
| Tr | Ko'tarilish vaqti | --- | 9.3 | --- | ||
| Td(yopiq) | O'chirishni kechiktirish vaqti | --- | 15.4 | --- | ||
| Tf | Kuz vaqti | --- | 3.6 | --- | ||
| Ciss | Kirish sig'imi | VDS=-15V , VGS=0V , f=1MHz | --- | 750 | --- | pF |
| Coss | Chiqish sig'imi | --- | 95 | --- | ||
| Crss | Teskari uzatish sig'imi | --- | 68 | --- |
