WSP6067A N&P-kanal 60V/-60V 7A/-5A SOP-8 WINSOK MOSFET
Umumiy tavsif
WSP6067A MOSFET-lar juda yuqori hujayra zichligiga ega bo'lgan xandaq P-ch texnologiyasi uchun eng ilg'or hisoblanadi. Ular RDSON va eshik zaryadi jihatidan mukammal ishlashni ta'minlaydi, ko'pchilik sinxron pul konvertorlari uchun mos keladi. Ushbu MOSFETlar RoHS va Green Product mezonlariga javob beradi, 100% EAS to'liq funktsional ishonchlilikni kafolatlaydi.
Xususiyatlari
Ilg'or texnologiya yuqori zichlikdagi hujayra xandaqlarini shakllantirishga imkon beradi, bu esa juda past eshik zaryadiga va yuqori CdV / dt effektining parchalanishiga olib keladi. Bizning qurilmalarimiz 100% EAS kafolati bilan ta'minlangan va ekologik jihatdan qulay.
Ilovalar
Yuqori chastotali yuklanish nuqtasini sinxronlash konvertori, tarmoq DC-DC quvvat tizimi, yuklash kaliti, elektron sigaretalar, simsiz zaryadlash, motorlar, dronlar, tibbiy asbob-uskunalar, avtomobillarni zaryadlash moslamalari, kontrollerlar, elektron qurilmalar, kichik maishiy texnika va maishiy elektronika .
tegishli material raqami
AOS
Muhim parametrlar
| Belgi | Parametr | Reyting | Birliklar | |
| N-kanal | P-kanal | |||
| VDS | Drenaj manbai kuchlanishi | 60 | -60 | V |
| VGS | Darvoza manba kuchlanishi | ±20 | ±20 | V |
| ID@TC=25℃ | Uzluksiz drenaj oqimi, VGS @ 10V1 | 7.0 | -5,0 | A |
| ID@TC=100℃ | Uzluksiz drenaj oqimi, VGS @ 10V1 | 4.0 | -2.5 | A |
| IDM | Impulsli drenaj oqimi2 | 28 | -20 | A |
| EAS | Yagona pulsli ko‘chki energiyasi3 | 22 | 28 | mJ |
| IAS | Ko'chki oqimi | 21 | -24 | A |
| PD@TC=25℃ | Umumiy quvvat sarfi4 | 2.0 | 2.0 | W |
| TSTG | Saqlash harorati oralig'i | -55 dan 150 gacha | -55 dan 150 gacha | ℃ |
| TJ | Ishlash birlashmasining harorat diapazoni | -55 dan 150 gacha | -55 dan 150 gacha | ℃ |
| Belgi | Parametr | Shartlar | Min. | Tip. | Maks. | Birlik |
| BVDSS | Drenaj manbasining buzilishi kuchlanishi | VGS=0V , ID=250uA | 60 | --- | --- | V |
| △BVDSS/△TJ | BVDSS harorat koeffitsienti | 25℃ ga havola, ID=1mA | --- | 0,063 | --- | V/℃ |
| RDS(ON) | Statik drenaj manbai - qarshilik 2 | VGS=10V , ID=5A | --- | 38 | 52 | mŌ |
| VGS=4,5V , ID=4A | --- | 55 | 75 | |||
| VGS(th) | Eshik chegarasi kuchlanishi | VGS=VDS , ID =250uA | 1 | 2 | 3 | V |
| △VGS(th) | VGS(th) harorat koeffitsienti | --- | -5.24 | --- | mV/℃ | |
| IDSS | Drenaj manbasining qochqin oqimi | VDS=48V , VGS=0V , TJ=25℃ | --- | --- | 1 | uA |
| VDS=48V , VGS=0V , TJ=55℃ | --- | --- | 5 | |||
| IGSS | Darvoza manbasining qochqin oqimi | VGS=±20V , VDS=0V | --- | --- | ±100 | nA |
| gfs | Oldinga o'tkazuvchanlik | VDS=5V , ID=4A | --- | 28 | --- | S |
| Rg | Darvoza qarshiligi | VDS=0V , VGS=0V , f=1MHz | --- | 2.8 | 4.3 | Ω |
| Qg | Darvozaning umumiy zaryadi (4,5V) | VDS=48V , VGS=4,5V , ID=4A | --- | 19 | 25 | nC |
| Qgs | Gate-Source to'lovi | --- | 2.6 | --- | ||
| Qgd | Darvoza-Drenaj zaryadi | --- | 4.1 | --- | ||
| Td(yoqilgan) | Kechikish vaqti | VDD=30V, VGS=10V, RG=3,3Ō, ID=1A | --- | 3 | --- | ns |
| Tr | Ko'tarilish vaqti | --- | 34 | --- | ||
| Td(yopiq) | O'chirishni kechiktirish vaqti | --- | 23 | --- | ||
| Tf | Kuz vaqti | --- | 6 | --- | ||
| Ciss | Kirish sig'imi | VDS=15V , VGS=0V , f=1MHz | --- | 1027 | --- | pF |
| Coss | Chiqish sig'imi | --- | 65 | --- | ||
| Crss | Teskari uzatish sig'imi | --- | 45 | --- |
