WSP6067A N&P-kanal 60V/-60V 7A/-5A SOP-8 WINSOK MOSFET
Umumiy tavsif
WSP6067A MOSFET-lar juda yuqori hujayra zichligiga ega bo'lgan xandaq P-ch texnologiyasi uchun eng ilg'or hisoblanadi.Ular RDSON va eshik zaryadi jihatidan mukammal ishlashni ta'minlaydi, ko'pchilik sinxron pul konvertorlari uchun mos keladi.Ushbu MOSFETlar RoHS va Green Product mezonlariga javob beradi, 100% EAS to'liq funktsional ishonchlilikni kafolatlaydi.
Xususiyatlari
Ilg'or texnologiya yuqori zichlikdagi hujayra xandaqlarini shakllantirishga imkon beradi, bu esa juda past eshik zaryadiga va yuqori CdV / dt effektining parchalanishiga olib keladi.Bizning qurilmalarimiz 100% EAS kafolati bilan ta'minlangan va ekologik jihatdan qulay.
Ilovalar
Yuqori chastotali yuklanish nuqtasini sinxronlash konvertori, tarmoq DC-DC quvvat tizimi, yuklash kaliti, elektron sigaretalar, simsiz zaryadlash, motorlar, dronlar, tibbiy asbob-uskunalar, avtomobillarni zaryadlovchi qurilmalar, kontrollerlar, elektron qurilmalar, kichik maishiy texnika va maishiy elektronika .
tegishli material raqami
AOS
Muhim parametrlar
Belgi | Parametr | Reyting | Birliklar | |
N-kanal | P-kanal | |||
VDS | Drenaj manbai kuchlanishi | 60 | -60 | V |
VGS | Darvoza manba kuchlanishi | ±20 | ±20 | V |
ID@TC=25℃ | Uzluksiz drenaj oqimi, VGS @ 10V1 | 7.0 | -5,0 | A |
ID@TC=100℃ | Uzluksiz drenaj oqimi, VGS @ 10V1 | 4.0 | -2.5 | A |
IDM | Impulsli drenaj oqimi2 | 28 | -20 | A |
EAS | Yagona impulsli ko‘chki energiyasi3 | 22 | 28 | mJ |
IAS | Ko'chki oqimi | 21 | -24 | A |
PD@TC=25℃ | Umumiy quvvat sarfi4 | 2.0 | 2.0 | W |
TSTG | Saqlash harorati oralig'i | -55 dan 150 gacha | -55 dan 150 gacha | ℃ |
TJ | Ishlash birlashmasining harorat diapazoni | -55 dan 150 gacha | -55 dan 150 gacha | ℃ |
Belgi | Parametr | Shartlar | Min. | Tip. | Maks. | Birlik |
BVDSS | Drenaj manbasining buzilishi kuchlanishi | VGS=0V , ID=250uA | 60 | --- | --- | V |
△BVDSS/△TJ | BVDSS harorat koeffitsienti | 25℃ ga havola, ID=1mA | --- | 0,063 | --- | V/℃ |
RDS(ON) | Statik drenaj manbai - qarshilik 2 | VGS=10V , ID=5A | --- | 38 | 52 | mŌ |
VGS=4,5V , ID=4A | --- | 55 | 75 | |||
VGS(th) | Eshik chegarasi kuchlanishi | VGS=VDS , ID =250uA | 1 | 2 | 3 | V |
△VGS(th) | VGS(th) harorat koeffitsienti | --- | -5.24 | --- | mV/℃ | |
IDSS | Drenaj manbasining qochqin oqimi | VDS=48V , VGS=0V , TJ=25℃ | --- | --- | 1 | uA |
VDS=48V , VGS=0V , TJ=55℃ | --- | --- | 5 | |||
IGSS | Darvoza manbasining qochqin oqimi | VGS=±20V , VDS=0V | --- | --- | ±100 | nA |
gfs | Oldinga o'tkazuvchanlik | VDS=5V , ID=4A | --- | 28 | --- | S |
Rg | Darvoza qarshiligi | VDS=0V , VGS=0V , f=1MHz | --- | 2.8 | 4.3 | Ω |
Qg | Darvozaning umumiy zaryadi (4,5V) | VDS=48V , VGS=4,5V , ID=4A | --- | 19 | 25 | nC |
Qgs | Gate-Source to'lovi | --- | 2.6 | --- | ||
Qgd | Darvoza-Drenaj zaryadi | --- | 4.1 | --- | ||
Td(yoqilgan) | Kechikish vaqti | VDD=30V, VGS=10V, RG=3,3Ō, ID=1A | --- | 3 | --- | ns |
Tr | Ko'tarilish vaqti | --- | 34 | --- | ||
Td(yopiq) | O'chirishni kechiktirish vaqti | --- | 23 | --- | ||
Tf | Kuz vaqti | --- | 6 | --- | ||
Ciss | Kirish sig'imi | VDS=15V , VGS=0V , f=1MHz | --- | 1027 | --- | pF |
Coss | Chiqish sig'imi | --- | 65 | --- | ||
Crss | Teskari uzatish sig'imi | --- | 45 | --- |