WSP4447 P-kanal -40V -11A SOP-8 WINSOK MOSFET
Umumiy tavsif
WSP4447 xandaq texnologiyasidan foydalanadigan va yuqori hujayra zichligiga ega bo'lgan yuqori samarali MOSFET hisoblanadi. U mukammal RDSON va eshik zaryadini taklif qiladi, bu esa uni ko'pgina sinxron pul konvertori ilovalarida ishlatish uchun mos qiladi. WSP4447 RoHS va Green Product standartlariga javob beradi va to'liq ishonchlilik uchun 100% EAS kafolati bilan birga keladi.
Xususiyatlari
Kengaytirilgan Trench texnologiyasi hujayra zichligini oshirishga imkon beradi, natijada Super Low Gate zaryadiga ega yashil qurilma va CdV/dt effekti juda yaxshi pasayadi.
Ilovalar
Har xil elektronika uchun yuqori chastotali konvertor
Ushbu konvertor noutbuklar, o'yin pristavkalari, tarmoq uskunalari, elektron sigaretalar, simsiz zaryadlovchilar, motorlar, dronlar, tibbiy asboblar, avtomobillarni zaryadlash qurilmalari, kontrollerlar, raqamli mahsulotlar, kichik maishiy texnika va iste'molchi kabi keng turdagi qurilmalarni samarali quvvatlantirish uchun mo'ljallangan. elektronika.
tegishli material raqami
AOS AO4425 AO4485, FDS4675 ON, VISHAY Si4401FDY, ST STS10P4LLF6, TOSHIBA TPC8133, PANJIT PJL9421, Sinopower SM4403PSK, RUICHIPS RU40L10H.
Muhim parametrlar
| Belgi | Parametr | Reyting | Birliklar |
| VDS | Drenaj manbai kuchlanishi | -40 | V |
| VGS | Darvoza manba kuchlanishi | ±20 | V |
| ID@TA=25℃ | Uzluksiz drenaj oqimi, VGS @ -10V1 | -11 | A |
| ID@TA=70℃ | Uzluksiz drenaj oqimi, VGS @ -10V1 | -9,0 | A |
| IDM a | 300µs impulsli drenaj oqimi (VGS=-10V) | -44 | A |
| EAS b | Ko‘chki energiyasi, bitta puls (L=0,1mH) | 54 | mJ |
| IAS b | Ko‘chki oqimi, Yagona impuls (L=0,1mH) | -33 | A |
| PD@TA=25℃ | Umumiy quvvat sarfi4 | 2.0 | W |
| TSTG | Saqlash harorati oralig'i | -55 dan 150 gacha | ℃ |
| TJ | Ishlash birlashmasining harorat diapazoni | -55 dan 150 gacha | ℃ |
| Belgi | Parametr | Shartlar | Min. | Tip. | Maks. | Birlik |
| BVDSS | Drenaj manbasining buzilishi kuchlanishi | VGS=0V , ID=-250uA | -40 | --- | --- | V |
| △BVDSS/△TJ | BVDSS harorat koeffitsienti | 25℃ ga havola, ID=-1mA | --- | -0,018 | --- | V/℃ |
| RDS(ON) | Statik drenaj manbai - qarshilik 2 | VGS=-10V , ID=-13A | --- | 13 | 16 | mŌ |
| VGS=-4,5V , ID=-5A | --- | 18 | 26 | |||
| VGS(th) | Eshik chegarasi kuchlanishi | VGS=VDS , ID =-250uA | -1.4 | -1.9 | -2.4 | V |
| △VGS(th) | VGS(th) harorat koeffitsienti | --- | 5.04 | --- | mV/℃ | |
| IDSS | Drenaj manbasining qochqin oqimi | VDS=-32V , VGS=0V , TJ=25℃ | --- | --- | -1 | uA |
| VDS=-32V , VGS=0V , TJ=55℃ | --- | --- | -5 | |||
| IGSS | Darvoza manbasining qochqin oqimi | VGS=±20V , VDS=0V | --- | --- | ±100 | nA |
| gfs | Oldinga o'tkazuvchanlik | VDS=-5V, ID=-10A | --- | 18 | --- | S |
| Qg | Darvozaning umumiy zaryadi (-4,5V) | VDS=-20V , VGS=-10V , ID=-11A | --- | 32 | --- | nC |
| Qgs | Gate-Source to'lovi | --- | 5.2 | --- | ||
| Qgd | Darvoza-Drenaj zaryadi | --- | 8 | --- | ||
| Td(yoqilgan) | Kechikish vaqti | VDD=-20V , VGS=-10V , RG=6Ō, ID=-1A ,RL=20Ō | --- | 14 | --- | ns |
| Tr | Ko'tarilish vaqti | --- | 12 | --- | ||
| Td(yopiq) | O'chirishni kechiktirish vaqti | --- | 41 | --- | ||
| Tf | Kuz vaqti | --- | 22 | --- | ||
| Ciss | Kirish sig'imi | VDS=-15V , VGS=0V , f=1MHz | --- | 1500 | --- | pF |
| Coss | Chiqish sig'imi | --- | 235 | --- | ||
| Crss | Teskari uzatish sig'imi | --- | 180 | --- |
