WSP4099 Dual P-kanal -40V -6.5A SOP-8 WINSOK MOSFET
Umumiy tavsif
WSP4099 - bu yuqori hujayra zichligiga ega kuchli P-ch MOSFET xandaqi.U mukammal RDSON va eshik zaryadini ta'minlaydi, bu uni ko'pgina sinxron pul konvertori ilovalari uchun mos qiladi.U RoHS va GreenProduct standartlariga javob beradi va to'liq funktsiyaning ishonchliligini tasdiqlash bilan 100% EAS kafolatiga ega.
Xususiyatlari
Yuqori hujayra zichligi, o'ta past eshik zaryadi, mukammal CdV/dt effektli parchalanishi va 100% EAS kafolati bilan ilg'or Trench texnologiyasi bizning yashil qurilmalarimizning barcha qulayliklari hisoblanadi.
Ilovalar
MB/NB/UMPC/VGA uchun yuqori chastotali yuklanish nuqtasini sinxronlash konvertori, tarmoq DC-DC quvvat tizimi, yuklash kaliti, elektron sigaretalar, simsiz zaryadlash, motorlar, dronlar, tibbiy yordam, avtomobil zaryadlovchilari, kontrollerlar, raqamli mahsulotlar , kichik maishiy texnika va maishiy elektronika.
tegishli material raqami
FDS4685, VISHAY Si4447ADY, TOSHIBA TPC8227-H, PANJIT PJL9835A, Sinopower SM4405BSK, dintek DTM4807, ruichips RU40S4H.
Muhim parametrlar
Belgi | Parametr | Reyting | Birliklar |
VDS | Drenaj manbai kuchlanishi | -40 | V |
VGS | Darvoza manba kuchlanishi | ±20 | V |
ID@TC=25℃ | Uzluksiz drenaj oqimi, -VGS @ -10V1 | -6.5 | A |
ID@TC=100℃ | Uzluksiz drenaj oqimi, -VGS @ -10V1 | -4.5 | A |
IDM | Impulsli drenaj oqimi2 | -22 | A |
EAS | Yagona impulsli ko‘chki energiyasi3 | 25 | mJ |
IAS | Ko'chki oqimi | -10 | A |
PD@TC=25℃ | Umumiy quvvat sarfi4 | 2.0 | W |
TSTG | Saqlash harorati oralig'i | -55 dan 150 gacha | ℃ |
TJ | Ishlash birlashmasining harorat diapazoni | -55 dan 150 gacha | ℃ |
Belgi | Parametr | Shartlar | Min. | Tip. | Maks. | Birlik |
BVDSS | Drenaj manbasining buzilishi kuchlanishi | VGS=0V , ID=-250uA | -40 | --- | --- | V |
△BVDSS/△TJ | BVDSS harorat koeffitsienti | 25℃ ga havola, ID=-1mA | --- | -0,02 | --- | V/℃ |
RDS(ON) | Statik drenaj manbai - qarshilik 2 | VGS=-10V , ID=-6,5A | --- | 30 | 38 | mŌ |
VGS=-4,5V , ID=-4,5A | --- | 46 | 62 | |||
VGS(th) | Eshik chegarasi kuchlanishi | VGS=VDS , ID =-250uA | -1,5 | -2,0 | -2.5 | V |
△VGS(th) | VGS(th) harorat koeffitsienti | --- | 3.72 | --- | V/℃ | |
IDSS | Drenaj manbasining qochqin oqimi | VDS=-32V , VGS=0V , TJ=25℃ | --- | --- | 1 | uA |
VDS=-32V , VGS=0V , TJ=55℃ | --- | --- | 5 | |||
IGSS | Darvoza manbasining qochqin oqimi | VGS=±20V , VDS=0V | --- | --- | ±100 | nA |
gfs | Oldinga o'tkazuvchanlik | VDS=-5V , ID=-4A | --- | 8 | --- | S |
Qg | Darvozaning umumiy zaryadi (-4,5V) | VDS=-20V , VGS=-4.5V , ID=-6.5A | --- | 7.5 | --- | nC |
Qgs | Gate-Source to'lovi | --- | 2.4 | --- | ||
Qgd | Darvoza-Drenaj zaryadi | --- | 3.5 | --- | ||
Td(yoqilgan) | Kechikish vaqti | VDD=-15V , VGS=-10V , RG=6Ō, ID=-1A ,RL=20Ō | --- | 8.7 | --- | ns |
Tr | Ko'tarilish vaqti | --- | 7 | --- | ||
Td(yopiq) | O'chirishni kechiktirish vaqti | --- | 31 | --- | ||
Tf | Kuz vaqti | --- | 17 | --- | ||
Ciss | Kirish sig'imi | VDS=-15V , VGS=0V , f=1MHz | --- | 668 | --- | pF |
Coss | Chiqish sig'imi | --- | 98 | --- | ||
Crss | Teskari uzatish sig'imi | --- | 72 | --- |