WSP4099 Dual P-kanal -40V -6.5A SOP-8 WINSOK MOSFET
Umumiy tavsif
WSP4099 - bu yuqori hujayra zichligiga ega kuchli P-ch MOSFET xandaqi. U mukammal RDSON va eshik zaryadini ta'minlaydi, bu uni ko'pgina sinxron pul konvertori ilovalari uchun mos qiladi. U RoHS va GreenProduct standartlariga javob beradi va to'liq funktsiya ishonchliligini tasdiqlash bilan 100% EAS kafolatiga ega.
Xususiyatlari
Yuqori hujayra zichligi, o'ta past eshik zaryadi, mukammal CdV/dt effektli parchalanishi va 100% EAS kafolati bilan ilg'or Trench texnologiyasi bizning yashil qurilmalarimizning barcha qulayliklari hisoblanadi.
Ilovalar
MB/NB/UMPC/VGA uchun yuqori chastotali yuklanish nuqtasi sinxron konvertori, tarmoq DC-DC quvvat tizimi, yuklash kaliti, elektron sigaretalar, simsiz zaryadlash, motorlar, dronlar, tibbiy yordam, avtomobil zaryadlovchilari, kontrollerlar, raqamli mahsulotlar , kichik maishiy texnika va maishiy elektronika.
tegishli material raqami
FDS4685, VISHAY Si4447ADY, TOSHIBA TPC8227-H, PANJIT PJL9835A, Sinopower SM4405BSK, dintek DTM4807, ruichips RU40S4H.
Muhim parametrlar
Belgi | Parametr | Reyting | Birliklar |
VDS | Drenaj manbai kuchlanishi | -40 | V |
VGS | Darvoza manba kuchlanishi | ±20 | V |
ID@TC=25℃ | Uzluksiz drenaj oqimi, -VGS @ -10V1 | -6.5 | A |
ID@TC=100℃ | Uzluksiz drenaj oqimi, -VGS @ -10V1 | -4.5 | A |
IDM | Impulsli drenaj oqimi2 | -22 | A |
EAS | Yagona pulsli ko‘chki energiyasi3 | 25 | mJ |
IAS | Ko'chki oqimi | -10 | A |
PD@TC=25℃ | Umumiy quvvat sarfi4 | 2.0 | W |
TSTG | Saqlash harorati oralig'i | -55 dan 150 gacha | ℃ |
TJ | Ishlash birlashmasining harorat diapazoni | -55 dan 150 gacha | ℃ |
Belgi | Parametr | Shartlar | Min. | Tip. | Maks. | Birlik |
BVDSS | Drenaj manbasining buzilishi kuchlanishi | VGS=0V , ID=-250uA | -40 | --- | --- | V |
△BVDSS/△TJ | BVDSS harorat koeffitsienti | 25℃ ga havola, ID=-1mA | --- | -0,02 | --- | V/℃ |
RDS(ON) | Statik drenaj manbai - qarshilik 2 | VGS=-10V , ID=-6,5A | --- | 30 | 38 | mŌ |
VGS=-4,5V , ID=-4,5A | --- | 46 | 62 | |||
VGS(th) | Eshik chegarasi kuchlanishi | VGS=VDS , ID =-250uA | -1,5 | -2,0 | -2.5 | V |
△VGS(th) | VGS(th) harorat koeffitsienti | --- | 3.72 | --- | V/℃ | |
IDSS | Drenaj manbasining qochqin oqimi | VDS=-32V , VGS=0V , TJ=25℃ | --- | --- | 1 | uA |
VDS=-32V , VGS=0V , TJ=55℃ | --- | --- | 5 | |||
IGSS | Darvoza manbasining qochqin oqimi | VGS=±20V , VDS=0V | --- | --- | ±100 | nA |
gfs | Oldinga o'tkazuvchanlik | VDS=-5V , ID=-4A | --- | 8 | --- | S |
Qg | Darvozaning umumiy zaryadi (-4,5V) | VDS=-20V , VGS=-4.5V , ID=-6.5A | --- | 7.5 | --- | nC |
Qgs | Gate-Source to'lovi | --- | 2.4 | --- | ||
Qgd | Darvoza-Drenaj zaryadi | --- | 3.5 | --- | ||
Td(yoqilgan) | Kechikish vaqti | VDD=-15V , VGS=-10V , RG=6Ō, ID=-1A ,RL=20Ō | --- | 8.7 | --- | ns |
Tr | Ko'tarilish vaqti | --- | 7 | --- | ||
Td(yopiq) | O'chirishni kechiktirish vaqti | --- | 31 | --- | ||
Tf | Kuz vaqti | --- | 17 | --- | ||
Ciss | Kirish sig'imi | VDS=-15V , VGS=0V , f=1MHz | --- | 668 | --- | pF |
Coss | Chiqish sig'imi | --- | 98 | --- | ||
Crss | Teskari uzatish sig'imi | --- | 72 | --- |