WSM340N10G N-kanal 100V 340A TOLL-8L WINSOK MOSFET
Umumiy tavsif
WSM340N10G - bu juda yuqori hujayra zichligiga ega bo'lgan eng yuqori samarali N-Ch MOSFET xandaqi bo'lib, u ko'pchilik sinxron konvertor ilovalari uchun mukammal RDSON va eshik zaryadini ta'minlaydi. WSM340N10G RoHS va Green Product talablariga javob beradi, 100% EAS kafolatlangan, to'liq funksiya ishonchliligi tasdiqlangan.
Xususiyatlari
Kengaytirilgan yuqori hujayra zichligi Xandaq texnologiyasi , Super Low Gate Charge , Zo'r CdV / dt effektining pasayishi , 100% EAS kafolati , Yashil qurilma mavjud.
Ilovalar
Sinxron tuzatish, shahar / shahar konvertori, yukni o'zgartirish tugmasi, tibbiy asbob-uskunalar, dronlar, PD quvvat manbalari, LED quvvat manbalari, sanoat uskunalari va boshqalar.
Muhim parametrlar
Mutlaq maksimal reytinglar
| Belgi | Parametr | Reyting | Birliklar |
| VDS | Drenaj manbai kuchlanishi | 100 | V |
| VGS | Darvoza manba kuchlanishi | ±20 | V |
| ID@TC=25℃ | Uzluksiz drenaj oqimi, VGS @ 10V | 340 | A |
| ID@TC=100℃ | Uzluksiz drenaj oqimi, VGS @ 10V | 230 | A |
| IDM | Impulsli drenaj oqimi..TC=25°C | 1150 | A |
| EAS | Ko'chki energiyasi, Yagona puls, L = 0,5 mH | 1800 | mJ |
| IAS | Ko'chki oqimi, Yagona puls, L = 0,5 mH | 120 | A |
| PD@TC=25℃ | Umumiy quvvat sarfi | 375 | W |
| PD@TC=100℃ | Umumiy quvvat sarfi | 187 | W |
| TSTG | Saqlash harorati oralig'i | -55 dan 175 gacha | ℃ |
| TJ | Ishlash birlashmasining harorat diapazoni | 175 | ℃ |
Elektr xususiyatlari (TJ = 25 ℃, boshqacha ko'rsatilmagan bo'lsa)
| Belgi | Parametr | Shartlar | Min. | Tip. | Maks. | Birlik |
| BVDSS | Drenaj manbasining buzilishi kuchlanishi | VGS=0V , ID=250uA | 100 | --- | --- | V |
| △BVDSS/△TJ | BVDSS harorat koeffitsienti | 25℃ ga havola, ID=1mA | --- | 0,096 | --- | V/℃ |
| RDS(ON) | Statik drenaj manbai - qarshilik | VGS=10V,ID=50A | --- | 1.6 | 2.3 | mŌ |
| VGS(th) | Eshik chegarasi kuchlanishi | VGS=VDS , ID =250uA | 2.0 | 3.0 | 4.0 | V |
| △VGS(th) | VGS(th) harorat koeffitsienti | --- | -5.5 | --- | mV/℃ | |
| IDSS | Drenaj manbasining qochqin oqimi | VDS=85V , VGS=0V , TJ=25℃ | --- | --- | 1 | uA |
| VDS=85V , VGS=0V , TJ=55℃ | --- | --- | 10 | |||
| IGSS | Darvoza manbasining qochqin oqimi | VGS=±25V , VDS=0V | --- | --- | ±100 | nA |
| Rg | Darvoza qarshiligi | VDS=0V , VGS=0V , f=1MHz | --- | 1.0 | --- | Ω |
| Qg | Darvozaning umumiy zaryadi (10V) | VDS=50V , VGS=10V , ID=50A | --- | 260 | --- | nC |
| Qgs | Gate-Source to'lovi | --- | 80 | --- | ||
| Qgd | Darvoza-Drenaj zaryadi | --- | 60 | --- | ||
| Td(yoqilgan) | Kechikish vaqti | VDD=50V , VGS=10V ,RG=1Ō,RL=1Ō,IDS=1A. | --- | 88 | --- | ns |
| Tr | Ko'tarilish vaqti | --- | 50 | --- | ||
| Td(yopiq) | O'chirishni kechiktirish vaqti | --- | 228 | --- | ||
| Tf | Kuz vaqti | --- | 322 | --- | ||
| Ciss | Kirish sig'imi | VDS=40V , VGS=0V , f=1MHz | --- | 13900 | --- | pF |
| Coss | Chiqish sig'imi | --- | 6160 | --- | ||
| Crss | Teskari uzatish sig'imi | --- | 220 | --- |
Xabaringizni shu yerga yozing va bizga yuboring
