WSF70P02 P-kanal -20V -70A TO-252 WINSOK MOSFET
Umumiy tavsif
WSF70P02 MOSFET hujayra zichligi yuqori bo'lgan eng yaxshi P-kanalli xandaq qurilmasidir.U ko'pgina sinxron pul konvertori ilovalari uchun ajoyib RDSON va darvoza to'lovini taklif qiladi.Qurilma RoHS va Green Product talablariga javob beradi, 100% EAS kafolatlanadi va toʻliq funksiya ishonchliligi uchun tasdiqlangan.
Xususiyatlari
Yuqori hujayra zichligi, o'ta past eshik zaryadi, CdV/dt effektini mukammal darajada kamaytirish, 100% EAS kafolati va ekologik toza qurilmalar uchun imkoniyatlarga ega ilg'or Trench texnologiyasi.
Ilovalar
Yuqori chastotali yuklanish nuqtasi sinxron, MB/NB/UMPC/VGA uchun pul konvertori, tarmoq DC-DC quvvat tizimi, yuklash kaliti, elektron sigaretalar, simsiz zaryadlash, motorlar, favqulodda quvvat manbalari, dronlar, tibbiy yordam, avtomobil zaryadlovchi qurilmalari , kontrollerlar, raqamli mahsulotlar, kichik maishiy texnika, maishiy elektronika.
tegishli material raqami
AOS
Muhim parametrlar
| Belgi | Parametr | Reyting | Birliklar | |
| 10s | Barqaror holat | |||
| VDS | Drenaj manbai kuchlanishi | -20 | V | |
| VGS | Darvoza manba kuchlanishi | ±12 | V | |
| ID@TC=25℃ | Uzluksiz drenaj oqimi, VGS @ -10V1 | -70 | A | |
| ID@TC=100℃ | Uzluksiz drenaj oqimi, VGS @ -10V1 | -36 | A | |
| IDM | Impulsli drenaj oqimi2 | -200 | A | |
| EAS | Yagona impulsli ko‘chki energiyasi3 | 360 | mJ | |
| IAS | Ko'chki oqimi | -55.4 | A | |
| PD@TC=25℃ | Umumiy quvvat sarfi4 | 80 | W | |
| TSTG | Saqlash harorati oralig'i | -55 dan 150 gacha | ℃ | |
| TJ | Ishlash birlashmasining harorat diapazoni | -55 dan 150 gacha | ℃ | |
| Belgi | Parametr | Shartlar | Min. | Tip. | Maks. | Birlik |
| BVDSS | Drenaj manbasining buzilishi kuchlanishi | VGS=0V , ID=-250uA | -20 | --- | --- | V |
| △BVDSS/△TJ | BVDSS harorat koeffitsienti | 25℃ ga havola, ID=-1mA | --- | -0,018 | --- | V/℃ |
| RDS(ON) | Statik drenaj manbai - qarshilik 2 | VGS=-4,5V , ID=-15A | --- | 6.8 | 9.0 | mŌ |
| VGS=-2,5V , ID=-10A | --- | 8.2 | 11 | |||
| VGS(th) | Eshik chegarasi kuchlanishi | VGS=VDS , ID =-250uA | -0,4 | -0,6 | -1.2 | V |
| △VGS(th) | VGS(th) harorat koeffitsienti | --- | 2.94 | --- | mV/℃ | |
| IDSS | Drenaj manbasining qochqin oqimi | VDS=-20V , VGS=0V , TJ=25℃ | --- | --- | 1 | uA |
| VDS=-20V , VGS=0V , TJ=55℃ | --- | --- | 5 | |||
| IGSS | Darvoza manbasining qochqin oqimi | VGS=±12V , VDS=0V | --- | --- | ±100 | nA |
| gfs | Oldinga o'tkazuvchanlik | VDS=-5V, ID=-10A | --- | 45 | --- | S |
| Qg | Darvozaning umumiy zaryadi (-4,5V) | VDS=-15V , VGS=-4.5V , ID=-10A | --- | 63 | --- | nC |
| Qgs | Gate-Source to'lovi | --- | 9.1 | --- | ||
| Qgd | Darvoza-Drenaj zaryadi | --- | 13 | --- | ||
| Td(yoqilgan) | Kechikish vaqti | VDD=-10V , VGS=-4.5V , RG=3,3Ō, ID=-10A | --- | 16 | --- | ns |
| Tr | Ko'tarilish vaqti | --- | 77 | --- | ||
| Td(yopiq) | O'chirishni kechiktirish vaqti | --- | 195 | --- | ||
| Tf | Kuz vaqti | --- | 186 | --- | ||
| Ciss | Kirish sig'imi | VDS=-10V , VGS=0V , f=1MHz | --- | 5783 | --- | pF |
| Coss | Chiqish sig'imi | --- | 520 | --- | ||
| Crss | Teskari uzatish sig'imi | --- | 445 | --- |
