WSD80120DN56 N-kanal 85V 120A DFN5X6-8 WINSOK MOSFET

mahsulotlar

WSD80120DN56 N-kanal 85V 120A DFN5X6-8 WINSOK MOSFET

qisqacha tavsif:

Qism raqami:WSD80120DN56

BVDSS:85V

ID:120A

RDSON:3,7 mŌ

Kanal:N-kanal

Paket:DFN5X6-8


Mahsulot detali

Ilova

Mahsulot teglari

WINSOK MOSFET mahsulotiga umumiy nuqtai

WSD80120DN56 MOSFET kuchlanishi 85V, oqim 120A, qarshilik 3,7mŌ, kanal N-kanal va paket DFN5X6-8.

WINSOK MOSFET dastur sohalari

Tibbiy kuchlanish MOSFET, MOSFET fotografik uskunalari, MOSFET dronlari, sanoat nazorati MOSFET, 5G MOSFET, avtomobil elektronikasi MOSFET.

WINSOK MOSFET boshqa markali materiallar raqamlariga mos keladi

AOS MOSFET AON6276, AONS62814T.STMikroelektronika MOSFET STL13N8F7, STL135N8F7AG.

MOSFET parametrlari

Belgi

Parametr

Reyting

Birliklar

VDS

Drenaj manbai kuchlanishi

85

V

VGS

Gate-Source kuchlanish

±25

V

ID@TC=25

Uzluksiz drenaj oqimi, VGS@ 10V

120

A

ID@TC=100

Uzluksiz drenaj oqimi, VGS@ 10V

96

A

IDM

Impulsli drenaj oqimi..TC=25°C

384

A

EAS

Ko'chki energiyasi, Yagona puls, L = 0,5 mH

320

mJ

IAS

Ko'chki oqimi, Yagona puls, L = 0,5 mH

180

A

PD@TC=25

Umumiy quvvat sarfi

104

W

PD@TC=100

Umumiy quvvat sarfi

53

W

TSTG

Saqlash harorati oralig'i

-55 dan 175 gacha

TJ

Ishlash birlashmasining harorat diapazoni

175

 

Belgi

Parametr

Shartlar

Min.

Tip.

Maks.

Birlik

BVDSS

Drenaj manbasining buzilishi kuchlanishi VGS=0V, ID=250uA 85

---

---

V

BVDSS/△TJ

BVDSSHarorat koeffitsienti 25 ga havola, ID=1mA

---

0,096

---

V/

RDS(ON)

Statik drenaj manbai - qarshilik VGS=10V, ID=50A

---

3.7

4.8

mΩ

VGS(th)

Eshik chegarasi kuchlanishi VGS=VDS, ID=250uA

2.0

3.0

4.0

V

VGS(th)

VGS(th)Harorat koeffitsienti

---

-5.5

---

mV/

IDSS

Drenaj manbasining qochqin oqimi VDS=85V, VGS=0V, TJ=25

---

---

1

uA

VDS=85V, VGS=0V, TJ=55

---

---

10

IGSS

Darvoza manbasining qochqin oqimi VGS=±25V, VDS=0V

---

---

±100

nA

Rg

Darvoza qarshiligi VDS=0V, VGS=0V , f=1MHz

---

3.2

---

Ω

Qg

Darvozaning umumiy zaryadi (10V) VDS=50V, VGS=10V, ID=10A

---

54

---

nC

Qgs

Gate-Source to'lovi

---

17

---

Qgd

Darvoza-Drenaj zaryadi

---

11

---

Td(yoqilgan)

Kechikish vaqti VDD=50V, VGS=10V,

RG=1Ω,RL=1Ō,IDS=10A.

---

21

---

ns

Tr

Ko'tarilish vaqti

---

18

---

Td(yopiq)

O'chirishni kechiktirish vaqti

---

36

---

Tf

Kuz vaqti

---

10

---

Ciss

Kirish sig'imi VDS=40V, VGS=0V , f=1MHz

---

3750

---

pF

Coss

Chiqish sig'imi

---

395

---

Crss

Teskari uzatish sig'imi

---

180

---


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