WSD75100DN56 N-kanal 75V 100A DFN5X6-8 WINSOK MOSFET
WINSOK MOSFET mahsulotiga umumiy nuqtai
WSD75100DN56 MOSFET kuchlanishi 75V, oqim 100A, qarshilik 5,3mŌ, kanal N-kanal va paket DFN5X6-8.
WINSOK MOSFET dastur sohalari
Elektron sigaretalar MOSFET, simsiz zaryadlovchi MOSFET, dronlar MOSFET, tibbiy yordam MOSFET, avtomobil zaryadlash moslamalari MOSFET, MOSFET kontrollerlari, raqamli mahsulotlar MOSFET, kichik maishiy texnika MOSFET, maishiy elektronika MOSFET.
WINSOK MOSFET boshqa markali materiallar raqamlariga mos keladi
AOS MOSFET AON6276,AON6278,AON628,AON6282,AON6448.Onsemi,FAIRCHILD MOSFET NVMFS6H824N.STMicroelectronics MOSFET STL1N8F7.INFINEON,IR MOSFET BSC3NEGNSFET M37POSGNSctor. ET PDC7966X.
MOSFET parametrlari
| Belgi | Parametr | Reyting | Birliklar |
| VDS | Drenaj manbai kuchlanishi | 75 | V |
| VGS | Gate-Source kuchlanish | ±25 | V |
| TJ | Maksimal ulanish harorati | 150 | °C |
| ID | Saqlash harorati oralig'i | -55 dan 150 gacha | °C |
| IS | Diyotning doimiy to'g'ridan-to'g'ri oqimi, TC=25°C | 50 | A |
| ID | Uzluksiz drenaj oqimi, VGS=10V, TC=25°C | 100 | A |
| Uzluksiz drenaj oqimi, VGS=10V, TC=100°C | 73 | A | |
| IDM | Impulsli drenaj oqimi, TC=25°C | 400 | A |
| PD | Maksimal quvvat sarfi, TC=25°C | 155 | W |
| Maksimal quvvat sarfi, TC=100°C | 62 | W | |
| RthJA | Issiqlik qarshiligi-Atrof muhitga ulanish ,t =10s ̀ | 20 | °C |
| Issiqlik qarshiligi - atrof-muhitga ulanish, barqaror holat | 60 | °C | |
| RqJC | Issiqlik qarshiligi - korpusga ulanish | 0,8 | °C |
| IAS | Ko'chki oqimi, Yagona puls, L = 0,5 mH | 30 | A |
| EAS | Ko'chki energiyasi, Yagona puls, L = 0,5 mH | 225 | mJ |
| Belgi | Parametr | Shartlar | Min. | Tip. | Maks. | Birlik |
| BVDSS | Drenaj manbasining buzilishi kuchlanishi | VGS=0V, ID=250uA | 75 | --- | --- | V |
| △BVDSS/△TJ | BVDSSHarorat koeffitsienti | 25 ga havola℃, ID=1mA | --- | 0,043 | --- | V/℃ |
| RDS(ON) | Statik drenaj manbai - qarshilik2 | VGS=10V, ID=25A | --- | 5.3 | 6.4 | mΩ |
| VGS(th) | Eshik chegarasi kuchlanishi | VGS=VDS, ID=250uA | 2.0 | 3.0 | 4.0 | V |
| △VGS(th) | VGS(th)Harorat koeffitsienti | --- | -6,94 | --- | mV/℃ | |
| IDSS | Drenaj manbasining qochqin oqimi | VDS=48V, VGS=0V, TJ=25℃ | --- | --- | 2 | uA |
| VDS=48V, VGS=0V, TJ=55℃ | --- | --- | 10 | |||
| IGSS | Darvoza manbasining qochqin oqimi | VGS=±20V, VDS=0V | --- | --- | ±100 | nA |
| gfs | Oldinga o'tkazuvchanlik | VDS=5V, ID=20A | --- | 50 | --- | S |
| Rg | Darvoza qarshiligi | VDS=0V, VGS=0V , f=1MHz | --- | 1.0 | 2 | Ω |
| Qg | Darvozaning umumiy zaryadi (10V) | VDS=20V, VGS=10V, ID=40A | --- | 65 | 85 | nC |
| Qgs | Gate-Source to'lovi | --- | 20 | --- | ||
| Qgd | Darvoza-Drenaj zaryadi | --- | 17 | --- | ||
| Td(yoqilgan) | Kechikish vaqti | VDD=30V, VGEN=10V, RG=1Ω, ID=1A ,RL=15ũ. | --- | 27 | 49 | ns |
| Tr | Ko'tarilish vaqti | --- | 14 | 26 | ||
| Td(yopiq) | O'chirishni kechiktirish vaqti | --- | 60 | 108 | ||
| Tf | Kuz vaqti | --- | 37 | 67 | ||
| Ciss | Kirish sig'imi | VDS=20V, VGS=0V , f=1MHz | 3450 | 3500 | 4550 | pF |
| Coss | Chiqish sig'imi | 245 | 395 | 652 | ||
| Crss | Teskari uzatish sig'imi | 100 | 195 | 250 |
