WSD60N10GDN56 N-kanal 100V 60A DFN5X6-8 WINSOK MOSFET
WINSOK MOSFET mahsulotiga umumiy nuqtai
WSD60N10GDN56 MOSFET kuchlanishi 100V, oqim 60A, qarshilik 8,5mŌ, kanal N-kanal va paket DFN5X6-8.
WINSOK MOSFET dastur sohalari
Elektron sigaretalar MOSFET, simsiz zaryadlovchi MOSFET, motorlar MOSFET, dronlar MOSFET, tibbiy yordam MOSFET, avtomobil zaryadlovchilari MOSFET, kontrollerlar MOSFET, raqamli mahsulotlar MOSFET, kichik maishiy texnika MOSFET, maishiy elektronika MOSFET.
MOSFET dastur maydonlariWINSOK MOSFET boshqa brend materiallari raqamlariga mos keladi
AOS MOSFET AON6226,AON6294,AON6298,AONS6292,AONS6692,AONS66923.Onsemi,FAIRCHILD MOSFET NTMFS6B14N.VISHAY MOSFET SiR84DP,SiR87NEETONFINS.M3FIETONF1TOBA ET TPH6R3ANL,TPH8R8ANH.PANJIT MOSFET PJQ5478A.NIKO-SEM MOSFET P81BKA.POTENS yarimo'tkazgich MOSFET PDC92X.
MOSFET parametrlari
| Belgi | Parametr | Reyting | Birliklar |
| VDS | Drenaj manbai kuchlanishi | 100 | V |
| VGS | Darvoza manba kuchlanishi | ±20 | V |
| ID@TC=25 ℃ | Uzluksiz drenaj oqimi | 60 | A |
| IDP | Impulsli drenaj oqimi | 210 | A |
| EAS | Ko'chki energiyasi, Yagona zarba | 100 | mJ |
| PD@TC=25 ℃ | Umumiy quvvat sarfi | 125 | V |
| TSTG | Saqlash harorati oralig'i | -55 dan 150 gacha | ℃ |
| TJ | Ishlash birlashmasining harorat diapazoni | -55 dan 150 gacha | ℃ |
| Belgi | Parametr | Shartlar | Min. | Tip. | Maks. | Birlik |
| BVDSS | Drenaj manbasining buzilishi kuchlanishi | VGS=0V, ID=250uA | 100 | --- | --- | V |
| Statik drenaj manbai - qarshilik | VGS=10V,ID=10A. | --- | 8.5 | 10. 0 | mŌ | |
| RDS(ON) | VGS=4,5V,ID=10A. | --- | 9.5 | 12. 0 | mŌ | |
| VGS(th) | Eshik chegarasi kuchlanishi | VGS=VDS, ID=250uA | 1.0 | --- | 2.5 | V |
| IDSS | Drenaj manbasining qochqin oqimi | VDS=80V, VGS=0V, TJ=25 ℃ | --- | --- | 1 | uA |
| IGSS | Darvoza manbasining qochqin oqimi | VGS=±20V, VDS=0V | --- | --- | ±100 | nA |
| Qg | Darvozaning umumiy zaryadi (10V) | VDS=50V, VGS=10V, ID=25A | --- | 49.9 | --- | nC |
| Qgs | Gate-Source to'lovi | --- | 6.5 | --- | ||
| Qgd | Darvoza-Drenaj zaryadi | --- | 12.4 | --- | ||
| Td(yoqilgan) | Kechikish vaqti | VDD=50V, VGS=10V,RG=2,2Ō, ID=25A | --- | 20.6 | --- | ns |
| Tr | Ko'tarilish vaqti | --- | 5 | --- | ||
| Td(yopiq) | O'chirishni kechiktirish vaqti | --- | 51.8 | --- | ||
| Tf | Kuz vaqti | --- | 9 | --- | ||
| Ciss | Kirish sig'imi | VDS=50V, VGS=0V , f=1MHz | --- | 2604 | --- | pF |
| Coss | Chiqish sig'imi | --- | 362 | --- | ||
| Crss | Teskari uzatish sig'imi | --- | 6.5 | --- | ||
| IS | Uzluksiz manba oqimi | VG=VD=0V , Kuchli oqim | --- | --- | 60 | A |
| ISP | Impulsli manba oqimi | --- | --- | 210 | A | |
| VSD | Diod oldinga kuchlanish | VGS=0V, IS=12A, TJ=25 ℃ | --- | --- | 1.3 | V |
| trr | Qayta tiklash vaqti | IF=12A,dI/dt=100A/mks,TJ=25 ℃ | --- | 60.4 | --- | nS |
| Qrr | Qayta tiklash to'lovi | --- | 106.1 | --- | nC |
