WSD60N10GDN56 N-kanal 100V 60A DFN5X6-8 WINSOK MOSFET

mahsulotlar

WSD60N10GDN56 N-kanal 100V 60A DFN5X6-8 WINSOK MOSFET

qisqa Tasvir:

Qism raqami:WSD60N10GDN56

BVDSS:100V

ID:60A

RDSON:8,5 mŌ

Kanal:N-kanal

Paket:DFN5X6-8


Mahsulot detali

Ilova

Mahsulot teglari

WINSOK MOSFET mahsulotiga umumiy nuqtai

WSD60N10GDN56 MOSFET kuchlanishi 100V, oqim 60A, qarshilik 8,5mŌ, kanal N-kanal va paket DFN5X6-8.

WINSOK MOSFET dastur sohalari

Elektron sigaretalar MOSFET, simsiz zaryadlovchi MOSFET, motorlar MOSFET, dronlar MOSFET, tibbiy yordam MOSFET, avtomobil zaryadlovchilari MOSFET, kontrollerlar MOSFET, raqamli mahsulotlar MOSFET, kichik maishiy texnika MOSFET, maishiy elektronika MOSFET.

MOSFET dastur maydonlariWINSOK MOSFET boshqa brend materiallari raqamlariga mos keladi

AOS MOSFET AON6226,AON6294,AON6298,AONS6292,AONS6692,AONS66923.Onsemi,FAIRCHILD MOSFET NTMFS6B14N.VISHAY MOSFET SiR84DP,SiR87NEFETONIDP,M3FINETONF19BAGOSCHILD. TPH6R3ANL,TPH8R8ANH.PANJIT MOSFET PJQ5478A.NIKO-SEM MOSFET P81BKA.POTENS Yarimo'tkazgich MOSFET PDC92X.

MOSFET parametrlari

Belgi

Parametr

Reyting

Birliklar

VDS

Drenaj manbai kuchlanishi

100

V

VGS

Darvoza manba kuchlanishi

±20

V

ID@TC=25 ℃

Uzluksiz drenaj oqimi

60

A

IDP

Impulsli drenaj oqimi

210

A

EAS

Ko'chki energiyasi, Yagona zarba

100

mJ

PD@TC=25 ℃

Umumiy quvvat sarfi

125

V

TSTG

Saqlash harorati oralig'i

-55 dan 150 gacha

TJ 

Ishlash birlashmasining harorat diapazoni

-55 dan 150 gacha

 

Belgi

Parametr

Shartlar

Min.

Tip.

Maks.

Birlik

BVDSS 

Drenaj manbasining buzilishi kuchlanishi VGS=0V, ID=250uA

100

---

---

V

  Statik drenaj manbai - qarshilik VGS=10V,ID=10A.

---

8.5

10. 0

RDS(ON)

VGS=4,5V,ID=10A.

---

9.5

12. 0

VGS(th)

Eshik chegarasi kuchlanishi VGS=VDS, ID=250uA

1.0

---

2.5

V

IDSS

Drenaj manbasining qochqin oqimi VDS=80V, VGS=0V, TJ=25 ℃

---

---

1

uA

IGSS

Darvoza manbasining qochqin oqimi VGS=±20V, VDS=0V

---

---

±100

nA

Qg 

Darvozaning umumiy zaryadi (10V) VDS=50V, VGS=10V, ID=25A

---

49.9

---

nC

Qgs 

Gate-Source to'lovi

---

6.5

---

Qgd 

Darvoza-Drenaj zaryadi

---

12.4

---

Td(yoqilgan)

Kechikish vaqti VDD=50V, VGS=10V,RG=2,2Ō, ID=25A

---

20.6

---

ns

Tr 

Ko'tarilish vaqti

---

5

---

Td(yopiq)

O'chirishni kechiktirish vaqti

---

51.8

---

Tf 

Kuz vaqti

---

9

---

Ciss 

Kirish sig'imi VDS=50V, VGS=0V , f=1MHz

---

2604

---

pF

Coss

Chiqish sig'imi

---

362

---

Crss 

Teskari uzatish sig'imi

---

6.5

---

IS 

Uzluksiz manba oqimi VG=VD=0V , Kuchli oqim

---

---

60

A

ISP

Impulsli manba oqimi

---

---

210

A

VSD

Diod oldinga kuchlanish VGS=0V, IS=12A, TJ=25 ℃

---

---

1.3

V

trr 

Qayta tiklash vaqti IF=12A,dI/dt=100A/mks,TJ=25 ℃

---

60.4

---

nS

Qrr 

Qayta tiklash to'lovi

---

106.1

---

nC


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