WSD6070DN56 N-kanal 60V 80A DFN5X6-8 WINSOK MOSFET

mahsulotlar

WSD6070DN56 N-kanal 60V 80A DFN5X6-8 WINSOK MOSFET

qisqacha tavsif:

Qism raqami:WSD6070DN56

BVDSS:60V

ID:80A

RDSON:7,3 mŌ 

Kanal:N-kanal

Paket:DFN5X6-8


Mahsulot detali

Ilova

Mahsulot teglari

WINSOK MOSFET mahsulotiga umumiy nuqtai

WSD6070DN56 MOSFET kuchlanishi 60V, oqim 80A, qarshilik 7,3mŌ, kanal N-kanal, paket DFN5X6-8.

WINSOK MOSFET dastur sohalari

Elektron sigaretalar MOSFET, simsiz zaryadlovchi MOSFET, motorlar MOSFET, dronlar MOSFET, tibbiy yordam MOSFET, avtomobil zaryadlovchilari MOSFET, kontrollerlar MOSFET, raqamli mahsulotlar MOSFET, kichik maishiy texnika MOSFET, maishiy elektronika MOSFET.

WINSOK MOSFET boshqa markali materiallar raqamlariga mos keladi

POTENS yarimo'tkazgich MOSFET PDC696X.

MOSFET parametrlari

Belgi

Parametr

Reyting

Birliklar

VDS

Drenaj manbai kuchlanishi

60

V

VGS

Gate-Source kuchlanish

±20

V

TJ

Maksimal ulanish harorati

150

°C

ID

Saqlash harorati oralig'i

-55 dan 150 gacha

°C

IS

Diyotning uzluksiz to'g'ridan-to'g'ri oqimi, TC=25°C

80

A

ID

Uzluksiz drenaj oqimi, VGS=10V, TC=25°C

80

A

Uzluksiz drenaj oqimi, VGS=10V, TC=100°C

66

A

IDM

Impulsli drenaj oqimi, TC=25°C

300

A

PD

Maksimal quvvat sarfi, TC=25°C

150

W

Maksimal quvvat sarfi, TC=100°C

75

W

RthJA

Issiqlik qarshiligi-Atrof muhitga ulanish ,t =10s ̀

50

°C/Vt

Issiqlik qarshiligi - atrof-muhitga ulanish, barqaror holat

62.5

°C/Vt

RqJC

Issiqlik qarshiligi - korpusga ulanish

1

°C/Vt

IAS

Ko'chki oqimi, Yagona puls, L = 0,5 mH

30

A

EAS

Ko'chki energiyasi, Yagona puls, L = 0,5 mH

225

mJ

 

Belgi

Parametr

Shartlar

Min.

Tip.

Maks.

Birlik

BVDSS

Drenaj manbasining buzilishi kuchlanishi VGS=0V, ID=250uA

60

---

---

V

BVDSS/△TJ

BVDSSHarorat koeffitsienti 25 ga havola, ID=1mA

---

0,043

---

V/

RDS(ON)

Statik drenaj manbai - qarshilik2 VGS=10V, ID=40A

---

7.0

9.0

mΩ

VGS(th)

Eshik chegarasi kuchlanishi VGS=VDS, ID=250uA

2.0

3.0

4.0

V

VGS(th)

VGS(th)Harorat koeffitsienti

---

-6,94

---

mV/

IDSS

Drenaj manbasining qochqin oqimi VDS=48V, VGS=0V, TJ=25

---

---

2

uA

VDS=48V, VGS=0V, TJ=55

---

---

10

IGSS

Darvoza manbasining qochqin oqimi VGS=±20V, VDS=0V

---

---

±100

nA

gfs

Oldinga o'tkazuvchanlik VDS=5V, ID=20A

---

50

---

S

Rg

Darvoza qarshiligi VDS=0V, VGS=0V , f=1MHz

---

1.0

---

Ω

Qg

Darvozaning umumiy zaryadi (10V) VDS=30V, VGS=10V, ID=40A

---

48

---

nC

Qgs

Gate-Source to'lovi

---

17

---

Qgd

Darvoza-Drenaj zaryadi

---

12

---

Td(yoqilgan)

Kechikish vaqti VDD=30V, VGEN=10V, RG=1Ω, ID=1A ,RL=15ũ.

---

16

---

ns

Tr

Ko'tarilish vaqti

---

10

---

Td(yopiq)

O'chirishni kechiktirish vaqti

---

40

---

Tf

Kuz vaqti

---

35

---

Ciss

Kirish sig'imi VDS=30V, VGS=0V , f=1MHz

---

2680

---

pF

Coss

Chiqish sig'imi

---

386

---

Crss

Teskari uzatish sig'imi

---

160

---


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