WSD6070DN56 N-kanal 60V 80A DFN5X6-8 WINSOK MOSFET
WINSOK MOSFET mahsulotiga umumiy nuqtai
WSD6070DN56 MOSFET kuchlanishi 60V, oqim 80A, qarshilik 7,3mŌ, kanal N-kanal, paket DFN5X6-8.
WINSOK MOSFET dastur sohalari
Elektron sigaretalar MOSFET, simsiz zaryadlovchi MOSFET, motorlar MOSFET, dronlar MOSFET, tibbiy yordam MOSFET, avtomobil zaryadlovchilari MOSFET, kontrollerlar MOSFET, raqamli mahsulotlar MOSFET, kichik maishiy texnika MOSFET, maishiy elektronika MOSFET.
WINSOK MOSFET boshqa markali materiallar raqamlariga mos keladi
POTENS yarimo'tkazgich MOSFET PDC696X.
MOSFET parametrlari
Belgi | Parametr | Reyting | Birliklar |
VDS | Drenaj manbai kuchlanishi | 60 | V |
VGS | Gate-Source kuchlanish | ±20 | V |
TJ | Maksimal ulanish harorati | 150 | °C |
ID | Saqlash harorati oralig'i | -55 dan 150 gacha | °C |
IS | Diyotning uzluksiz to'g'ridan-to'g'ri oqimi, TC=25°C | 80 | A |
ID | Uzluksiz drenaj oqimi, VGS=10V, TC=25°C | 80 | A |
Uzluksiz drenaj oqimi, VGS=10V, TC=100°C | 66 | A | |
IDM | Impulsli drenaj oqimi, TC=25°C | 300 | A |
PD | Maksimal quvvat sarfi, TC=25°C | 150 | W |
Maksimal quvvat sarfi, TC=100°C | 75 | W | |
RthJA | Issiqlik qarshiligi-Atrof muhitga ulanish ,t =10s ̀ | 50 | °C/Vt |
Issiqlik qarshiligi - atrof-muhitga ulanish, barqaror holat | 62.5 | °C/Vt | |
RqJC | Issiqlik qarshiligi - korpusga ulanish | 1 | °C/Vt |
IAS | Ko'chki oqimi, Yagona puls, L = 0,5 mH | 30 | A |
EAS | Ko'chki energiyasi, Yagona puls, L = 0,5 mH | 225 | mJ |
Belgi | Parametr | Shartlar | Min. | Tip. | Maks. | Birlik |
BVDSS | Drenaj manbasining buzilishi kuchlanishi | VGS=0V, ID=250uA | 60 | --- | --- | V |
△BVDSS/△TJ | BVDSSHarorat koeffitsienti | 25 ga havola℃, ID=1mA | --- | 0,043 | --- | V/℃ |
RDS(ON) | Statik drenaj manbai - qarshilik2 | VGS=10V, ID=40A | --- | 7.0 | 9.0 | mΩ |
VGS(th) | Eshik chegarasi kuchlanishi | VGS=VDS, ID=250uA | 2.0 | 3.0 | 4.0 | V |
△VGS(th) | VGS(th)Harorat koeffitsienti | --- | -6,94 | --- | mV/℃ | |
IDSS | Drenaj manbasining qochqin oqimi | VDS=48V, VGS=0V, TJ=25℃ | --- | --- | 2 | uA |
VDS=48V, VGS=0V, TJ=55℃ | --- | --- | 10 | |||
IGSS | Darvoza manbasining qochqin oqimi | VGS=±20V, VDS=0V | --- | --- | ±100 | nA |
gfs | Oldinga o'tkazuvchanlik | VDS=5V, ID=20A | --- | 50 | --- | S |
Rg | Darvoza qarshiligi | VDS=0V, VGS=0V , f=1MHz | --- | 1.0 | --- | Ω |
Qg | Darvozaning umumiy zaryadi (10V) | VDS=30V, VGS=10V, ID=40A | --- | 48 | --- | nC |
Qgs | Gate-Source to'lovi | --- | 17 | --- | ||
Qgd | Darvoza-Drenaj zaryadi | --- | 12 | --- | ||
Td(yoqilgan) | Kechikish vaqti | VDD=30V, VGEN=10V, RG=1Ω, ID=1A ,RL=15ũ. | --- | 16 | --- | ns |
Tr | Ko'tarilish vaqti | --- | 10 | --- | ||
Td(yopiq) | O'chirishni kechiktirish vaqti | --- | 40 | --- | ||
Tf | Kuz vaqti | --- | 35 | --- | ||
Ciss | Kirish sig'imi | VDS=30V, VGS=0V , f=1MHz | --- | 2680 | --- | pF |
Coss | Chiqish sig'imi | --- | 386 | --- | ||
Crss | Teskari uzatish sig'imi | --- | 160 | --- |