WSD45N10GDN56 N-kanal 100V 45A DFN5X6-8 WINSOK MOSFET

mahsulotlar

WSD45N10GDN56 N-kanal 100V 45A DFN5X6-8 WINSOK MOSFET

qisqa Tasvir:

Qism raqami:WSD45N10GDN56

BVDSS:100V

ID:45A

RDSON:14,5 mŌ

Kanal:N-kanal

Paket:DFN5X6-8


Mahsulot detali

Ilova

Mahsulot teglari

WINSOK MOSFET mahsulotiga umumiy nuqtai

WSD45N10GDN56 MOSFET kuchlanishi 100V, oqim 45A, qarshilik 14,5 mŌ, kanal N-kanal va paket DFN5X6-8.

WINSOK MOSFET dastur sohalari

Elektron sigaretalar MOSFET, simsiz zaryadlovchi MOSFET, motorlar MOSFET, dronlar MOSFET, tibbiy yordam MOSFET, avtomobil zaryadlovchilari MOSFET, kontrollerlar MOSFET, raqamli mahsulotlar MOSFET, kichik maishiy texnika MOSFET, maishiy elektronika MOSFET.

WINSOK MOSFET boshqa markali materiallar raqamlariga mos keladi

AOS MOSFET AON6226, AON6294, AON6298, AONS6292, AONS6692, AONS66923.PANJIT MOSFET PJQ5476AL.POTENS yarimo'tkazgich MOSFET PDC966X.

MOSFET parametrlari

Belgi

Parametr

Reyting

Birliklar

VDS

Drenaj manbai kuchlanishi

100

V

VGS

Gate-Source kuchlanish

±20

V

ID@TC=25

Uzluksiz drenaj oqimi, VGS@ 10V

45

A

ID@TC=100

Uzluksiz drenaj oqimi, VGS@ 10V

33

A

ID@TA=25

Uzluksiz drenaj oqimi, VGS@ 10V

12

A

ID@TA=70

Uzluksiz drenaj oqimi, VGS@ 10V

9.6

A

IDMa

Impulsli drenaj oqimi

130

A

EASb

Yagona pulsli ko'chki energiyasi

169

mJ

IASb

Ko'chki oqimi

26

A

PD@TC=25

Umumiy quvvat sarfi

95

W

PD@TA=25

Umumiy quvvat sarfi

5.0

W

TSTG

Saqlash harorati oralig'i

-55 dan 150 gacha

TJ

Ishlash birlashmasining harorat diapazoni

-55 dan 150 gacha

 

Belgi

Parametr

Shartlar

Min.

Tip.

Maks.

Birlik

BVDSS

Drenaj manbasining buzilishi kuchlanishi VGS=0V, ID=250uA

100

---

---

V

BVDSS/△TJ

BVDSS harorat koeffitsienti 25 ga havola, ID=1mA

---

0,0

---

V/

RDS(ON)d

Statik drenaj manbai - qarshilik2 VGS=10V, ID=26A

---

14.5

17.5

mΩ

VGS(th)

Eshik chegarasi kuchlanishi VGS=VDS, ID=250uA

2.0

3.0

4.0

V

VGS(th)

VGS(th)Harorat koeffitsienti

---

-5   mV/

IDSS

Drenaj manbasining qochqin oqimi VDS=80V, VGS=0V, TJ=25

---

- 1

uA

VDS=80V, VGS=0V, TJ=55

---

- 30

IGSS

Darvoza manbasining qochqin oqimi VGS=±20V, VDS=0V

---

- ±100

nA

Rge

Darvoza qarshiligi VDS=0V, VGS=0V , f=1MHz

---

1.0

---

Ω

Qge

Darvozaning umumiy zaryadi (10V) VDS=50V, VGS=10V, ID=26A

---

42

59

nC

Qgse

Gate-Source to'lovi

---

12

--

Qgde

Darvoza-Drenaj zaryadi

---

12

---

Td(yoqilgan)e

Kechikish vaqti VDD=30V, VGEN=10V, RG=6Ω

ID=1A ,RL=30Ō

---

19

35

ns

Tre

Ko'tarilish vaqti

---

9

17

Td(yopiq)e

O'chirishni kechiktirish vaqti

---

36

65

Tfe

Kuz vaqti

---

22

40

Sisse

Kirish sig'imi VDS=30V, VGS=0V , f=1MHz

---

1800

---

pF

Kosse

Chiqish sig'imi

---

215

---

Crsse

Teskari uzatish sig'imi

---

42

---


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