WSD4280DN22 Ikki P-kanal -15V -4.6A DFN2X2-6L WINSOK MOSFET

mahsulotlar

WSD4280DN22 Ikki P-kanal -15V -4.6A DFN2X2-6L WINSOK MOSFET

qisqacha tavsif:

Qism raqami:WSD4280DN22

BVDSS:-15V

ID:-4,6A

RDSON:47 mŌ 

Kanal:Ikkita P-kanal

Paket:DFN2X2-6L


Mahsulot detali

Ilova

Mahsulot teglari

WINSOK MOSFET mahsulotiga umumiy nuqtai

WSD4280DN22 MOSFET kuchlanishi -15V, oqim -4,6A, qarshilik 47mŌ, kanal Dual P-kanal va paket DFN2X2-6L.

WINSOK MOSFET dastur sohalari

Ikki tomonlama blokirovka kaliti; DC-DC konvertatsiya ilovalari;Li-batareyani zaryadlash;Elektron sigaret MOSFET, simsiz zaryadlash MOSFET, avtomobil zaryadlash MOSFET, kontroller MOSFET, raqamli mahsulot MOSFET, kichik maishiy texnika MOSFET, maishiy elektronika MOSFET.

WINSOK MOSFET boshqa markali materiallar raqamlariga mos keladi

PANJIT MOSFET PJQ2815

MOSFET parametrlari

Belgi

Parametr

Reyting

Birliklar

VDS

Drenaj manbai kuchlanishi

-15

V

VGS

Darvoza manba kuchlanishi

±8

V

ID@Tc=25 ℃

Uzluksiz drenaj oqimi, VGS= -4,5V1 

-4.6

A

IDM

300 mkS impulsli drenaj oqimi, (VGS=-4,5V)

-15

A

PD 

Quvvat sarfi T dan yuqori bo'lgan pasayishA = 25°C (2-eslatma)

1.9

W

TSTG, TJ 

Saqlash harorati oralig'i

-55 dan 150 gacha

RJA

Termal qarshilik Junction-atrof muhit1

65

℃/Vt

RthJC

Issiqlikka chidamlilik o'tish joyi1

50

℃/Vt

Elektr xususiyatlari (TJ = 25 ℃, boshqacha ko'rsatilmagan bo'lsa)

Belgi

Parametr

Shartlar

Min.

Tip.

Maks.

Birlik

BVDSS 

Drenaj manbasining buzilishi kuchlanishi VGS=0V, ID=-250uA

-15

---

---

V

△BVDSS/△TJ

BVDSS harorat koeffitsienti 25 ℃ ga havola, ID=-1mA

---

-0,01

---

V/℃

RDS(ON)

Statik drenaj manbai - qarshilik2  VGS=-4,5V, ID=-1A

---

47

61

VGS=-2,5V, ID=-1A

---

61

80

VGS=-1,8V, ID=-1A

---

90

150

VGS(th)

Eshik chegarasi kuchlanishi VGS=VDS, ID=-250uA

-0,4

-0,62

-1.2

V

△VGS(th) 

VGS(th)Harorat koeffitsienti

---

3.13

---

mV/℃

IDSS

Drenaj manbasining qochqin oqimi VDS=-10V, VGS=0V, TJ=25 ℃

---

---

-1

uA

VDS=-10V, VGS=0V, TJ=55 ℃

---

---

-5

IGSS

Darvoza manbasining qochqin oqimi VGS=±12V, VDS=0V

---

---

±100

nA

gfs

Oldinga o'tkazuvchanlik VDS=-5V, ID=-1A

---

10

---

S

Rg 

Darvoza qarshiligi VDS=0V, VGS=0V , f=1MHz

---

2

---

Ō

Qg 

Darvozaning umumiy zaryadi (-4,5V)

VDS=-10V, VGS=-4,5V, ID=-4,6A

---

9.5

---

nC

Qgs 

Gate-Source to'lovi

---

1.4

---

Qgd 

Darvoza-Drenaj zaryadi

---

2.3

---

Td(yoqilgan)

Kechikish vaqti VDD=-10V,VGS=-4,5V, RG=1Ō

ID=-3,9A,

---

15

---

ns

Tr 

Ko'tarilish vaqti

---

16

---

Td(yopiq)

O'chirishni kechiktirish vaqti

---

30

---

Tf 

Kuz vaqti

---

10

---

Ciss 

Kirish sig'imi VDS=-10V, VGS=0V , f=1MHz

---

781

---

pF

Coss

Chiqish sig'imi

---

98

---

Crss 

Teskari uzatish sig'imi

---

96

---


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