WSD40120DN56 N-kanal 40V 120A DFN5X6-8 WINSOK MOSFET
WINSOK MOSFET mahsulotiga umumiy nuqtai
WSD40120DN56 MOSFET kuchlanishi 40V, oqim 120A, qarshilik 1,85mŌ, kanal N-kanal va paket DFN5X6-8.
WINSOK MOSFET dastur sohalari
Elektron sigaretalar MOSFET, simsiz zaryadlovchi MOSFET, dronlar MOSFET, tibbiy yordam MOSFET, avtomobil zaryadlash moslamalari MOSFET, MOSFET kontrollerlari, raqamli mahsulotlar MOSFET, kichik maishiy texnika MOSFET, maishiy elektronika MOSFET.
WINSOK MOSFET boshqa markali materiallar raqamlariga mos keladi
AOS MOSFET AON6234,AON6232,AON623.Onsemi,FAIRCHILD MOSFET NVMFS5C442NL.VISHAY MOSFET SiRA52ADP,SiJA52ADP.STMicroelectronics MOSFET TTL12N4LF6SHBASSP4.PHETX 4PB.PANJIT MOSFET PJQ544.NIKO-SEM MOSFET PKCSBB.POTENS yarimo'tkazgich MOSFET PDC496X.
MOSFET parametrlari
| Belgi | Parametr | Reyting | Birliklar |
| VDS | Drenaj manbai kuchlanishi | 40 | V |
| VGS | Gate-Source kuchlanish | ±20 | V |
| ID@TC=25℃ | Uzluksiz drenaj oqimi, VGS@ 10V1,7 | 120 | A |
| ID@TC=100℃ | Uzluksiz drenaj oqimi, VGS@ 10V1,7 | 100 | A |
| IDM | Impulsli drenaj oqimi2 | 400 | A |
| EAS | Yagona pulsli ko'chki energiyasi3 | 240 | mJ |
| IAS | Ko'chki oqimi | 31 | A |
| PD@TC=25℃ | Umumiy quvvat sarfi4 | 104 | W |
| TSTG | Saqlash harorati oralig'i | -55 dan 150 gacha | ℃ |
| TJ | Ishlash birlashmasining harorat diapazoni | -55 dan 150 gacha | ℃ |
| Belgi | Parametr | Shartlar | Min. | Tip. | Maks. | Birlik |
| BVDSS | Drenaj manbasining buzilishi kuchlanishi | VGS=0V, ID=250uA | 40 | --- | --- | V |
| △BVDSS/△TJ | BVDSSHarorat koeffitsienti | 25 ga havola℃, ID=1mA | --- | 0,043 | --- | V/℃ |
| RDS(ON) | Statik drenaj manbai - qarshilik2 | VGS=10V, ID=30A | --- | 1.85 | 2.4 | mΩ |
| RDS(ON) | Statik drenaj manbai - qarshilik2 | VGS=4,5V, ID=20A | --- | 2.5 | 3.3 | mŌ |
| VGS(th) | Eshik chegarasi kuchlanishi | VGS=VDS, ID=250uA | 1.5 | 1.8 | 2.5 | V |
| △VGS(th) | VGS(th)Harorat koeffitsienti | --- | -6,94 | --- | mV/℃ | |
| IDSS | Drenaj manbasining qochqin oqimi | VDS=32V, VGS=0V, TJ=25℃ | --- | --- | 2 | uA |
| VDS=32V, VGS=0V, TJ=55℃ | --- | --- | 10 | |||
| IGSS | Darvoza manbasining qochqin oqimi | VGS=±20V, VDS=0V | --- | --- | ±100 | nA |
| gfs | Oldinga o'tkazuvchanlik | VDS=5V, ID=20A | --- | 55 | --- | S |
| Rg | Darvoza qarshiligi | VDS=0V, VGS=0V , f=1MHz | --- | 1.1 | 2 | Ω |
| Qg | Darvozaning umumiy zaryadi (10V) | VDS=20V, VGS=10V, ID=10A | --- | 76 | 91 | nC |
| Qgs | Gate-Source to'lovi | --- | 12 | 14.4 | ||
| Qgd | Darvoza-Drenaj zaryadi | --- | 15.5 | 18.6 | ||
| Td(yoqilgan) | Kechikish vaqti | VDD=30V, VGEN=10V, RG=1Ω, ID=1A ,RL=15ũ. | --- | 20 | 24 | ns |
| Tr | Ko'tarilish vaqti | --- | 10 | 12 | ||
| Td(yopiq) | O'chirishni kechiktirish vaqti | --- | 58 | 69 | ||
| Tf | Kuz vaqti | --- | 34 | 40 | ||
| Ciss | Kirish sig'imi | VDS=20V, VGS=0V , f=1MHz | --- | 4350 | --- | pF |
| Coss | Chiqish sig'imi | --- | 690 | --- | ||
| Crss | Teskari uzatish sig'imi | --- | 370 | --- |
