WSD30350DN56G N-kanal 30V 350A DFN5X6-8 WINSOK MOSFET

mahsulotlar

WSD30350DN56G N-kanal 30V 350A DFN5X6-8 WINSOK MOSFET

qisqacha tavsif:

Qism raqami:WSD30350DN56G

BVDSS:30V

ID:350A

RDSON:0,48 mŌ 

Kanal:N-kanal

Paket:DFN5X6-8


Mahsulot detali

Ilova

Mahsulot teglari

WINSOK MOSFET mahsulotiga umumiy nuqtai

WSD30350DN56G MOSFET kuchlanishi 30V, oqim 350A, qarshilik 1,8mŌ, kanal N-kanal va paket DFN5X6-8.

WINSOK MOSFET dastur sohalari

Elektron sigaretalar MOSFET, simsiz zaryadlovchi MOSFET, dronlar MOSFET, tibbiy yordam MOSFET, avtomobil zaryadlash moslamalari MOSFET, MOSFET kontrollerlari, raqamli mahsulotlar MOSFET, kichik maishiy texnika MOSFET, maishiy elektronika MOSFET.

MOSFET parametrlari

Belgi

Parametr

Reyting

Birliklar

VDS

Drenaj manbai kuchlanishi

30

V

VGS

Gate-Source kuchlanish

±20

V

ID@TC=25

Uzluksiz drenaj oqimiSilicon Limited)1,7

350

A

ID@TC=70

Uzluksiz drenaj oqimi (Silicon Limited)1,7

247

A

IDM

Impulsli drenaj oqimi2

600

A

EAS

Yagona pulsli ko'chki energiyasi3

1800

mJ

IAS

Ko'chki oqimi

100

A

PD@TC=25

Umumiy quvvat sarfi4

104

W

TSTG

Saqlash harorati oralig'i

-55 dan 150 gacha

TJ

Ishlash birlashmasining harorat diapazoni

-55 dan 150 gacha

 

Belgi

Parametr

Shartlar

Min.

Tip.

Maks.

Birlik

BVDSS

Drenaj manbasining buzilishi kuchlanishi VGS=0V, ID=250uA

30

---

---

V

BVDSS/△TJ

BVDSSHarorat koeffitsienti 25 ga havola, ID=1mA

---

0,022

---

V/

RDS(ON)

Statik drenaj manbai - qarshilik2 VGS=10V, ID=20A

---

0,48

0,62

mΩ
VGS=4,5V, ID=20A

---

0,72

0,95

VGS(th)

Eshik chegarasi kuchlanishi VGS=VDS, ID=250uA

1.2

1.5

2.5

V

VGS(th)

VGS(th)Harorat koeffitsienti

---

-6.1

---

mV/

IDSS

Drenaj manbasining qochqin oqimi VDS=24V, VGS=0V, TJ=25

---

---

1

uA

VDS=24V, VGS=0V, TJ=55

---

---

5

IGSS

Darvoza manbasining qochqin oqimi VGS=±20V, VDS=0V

---

---

±100

nA

gfs

Oldinga o'tkazuvchanlik VDS=5V, ID=10A

---

40

---

S

Rg

Darvoza qarshiligi VDS=0V, VGS=0V , f=1MHz

---

3.8

1.5

Ω

Qg

Darvozaning umumiy zaryadi (4,5V) VDS=15V, VGS=4,5V, ID=20A

---

89

---

nC

Qgs

Gate-Source to'lovi

---

37

---

Qgd

Darvoza-Drenaj zaryadi

---

20

---

Td(yoqilgan)

Kechikish vaqti VDD=15V, VGEN=10V,

RG=1Ω, ID=10A

---

25

---

ns

Tr

Ko'tarilish vaqti

---

34

---

Td(yopiq)

O'chirishni kechiktirish vaqti

---

61

---

Tf

Kuz vaqti

---

18

---

Ciss

Kirish sig'imi VDS=15V, VGS=0V , f=1MHz

---

7845

---

pF

Coss

Chiqish sig'imi

---

4525

---

Crss

Teskari uzatish sig'imi

---

139

---


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