WSD3023DN56 N-Ch va P-kanal 30V/-30V 14A/-12A DFN5*6-8 WINSOK MOSFET

qisqa Tasvir:

Model raqami:WSD3023DN56

BVDSS:30V/-30V

RDSON:14mŌ/23mŌ

ID:14A/-12A

Kanal:N-Ch va P-kanal

Paket:DFN5 * 6-8

Mahsulot yozi:WSD3023DN56 MOSFET kuchlanishi 30V/-30V, oqim 14A/-12A, qarshilik 14mŌ/23mũ, kanal N-Ch va P-Kanal, paket esa DFN5 * 6-8.

Ilovalar:Dronlar, motorlar, avtomobil elektronikasi, asosiy jihozlar.

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Mahsulot detali

Ilova

Mahsulot teglari

Umumiy tavsif

WSD3023DN56 - bu juda yuqori hujayra zichligiga ega bo'lgan N-ch va P-ch MOSFET-larning eng yuqori mahsuldorligi bo'lib, ular ko'pchilik sinxron konvertor ilovalari uchun mukammal RDSON va eshik zaryadini ta'minlaydi.WSD3023DN56 RoHS va Yashil mahsulot talablariga javob beradi, 100% EAS kafolatlangan, to'liq funksiya ishonchliligi tasdiqlangan.

Xususiyatlari

Kengaytirilgan yuqori hujayra zichligi Xandaq texnologiyasi, Super Past Gate zaryadi, Zo'r CdV / dt effektining pasayishi, 100% EAS kafolati, Yashil qurilma mavjud.

Ilovalar

MB/NB/UMPC/VGA uchun yuqori chastotali yuklanish nuqtasi sinxron konvertor, DC-DC tarmoq quvvat tizimi, CCFL orqa yorug'lik inverteri, dronlar, motorlar, avtomobil elektronikasi, asosiy jihozlar.

tegishli material raqami

PANJIT PJQ5606

Muhim parametrlar

Belgi	Parametr	Reyting		Birliklar
Belgi	Parametr	N-Ch	P-Ch	Birliklar
VDS	Drenaj manbai kuchlanishi	30	-30	V
VGS	Darvoza manba kuchlanishi	±20	±20	V
ID	Uzluksiz drenaj oqimi, VGS(NP)=10V,Ta=25℃	14*	-12	A
ID	Uzluksiz drenaj oqimi, VGS(NP)=10V,Ta=70℃	7.6	-9.7	A
IDP a	Impulsli drenaj oqimi sinovdan o'tkazildi, VGS(NP)=10V	48	-48	A
EAS c	Ko'chki energiyasi, Yagona zarba, L = 0,5 mH	20	20	mJ
IAS c	Ko'chki oqimi, Yagona impuls , L = 0,5 mH	9	-9	A
PD	Umumiy quvvat sarfi, Ta = 25 ℃	5.25	5.25	W
TSTG	Saqlash harorati oralig'i	-55 dan 175 gacha	-55 dan 175 gacha	℃
TJ	Ishlash birlashmasining harorat diapazoni	175	175	℃
RqJA b	Issiqlik qarshiligi - atrof-muhitga ulanish, barqaror holat	60	60	℃/Vt
RqJC	Issiqlik qarshiligi - korpusga ulanish, barqaror holat	6.25	6.25	℃/Vt

Belgi	Parametr	Shartlar	Min.	Tip.	Maks.	Birlik
BVDSS	Drenaj manbasining buzilishi kuchlanishi	VGS=0V , ID=250uA	30	---	---	V
RDS(ON)d	Statik drenaj manbai - qarshilik	VGS=10V , ID=8A	---	14	18.5	mŌ
RDS(ON)d	Statik drenaj manbai - qarshilik	VGS=4,5V , ID=5A	---	17	25	mŌ
VGS(th)	Eshik chegarasi kuchlanishi	VGS=VDS , ID =250uA	1.3	1.8	2.3	V
IDSS	Drenaj manbasining qochqin oqimi	VDS=20V , VGS=0V , TJ=25℃	---	---	1	uA
IDSS	Drenaj manbasining qochqin oqimi	VDS=20V , VGS=0V , TJ=85℃	---	---	30	uA
IGSS	Darvoza manbasining qochqin oqimi	VGS=±20V , VDS=0V	---	---	±100	nA
Rg	Darvoza qarshiligi	VDS=0V , VGS=0V , f=1MHz	---	1.7	3.4	Ω
Qge	Darvozaning umumiy to'lovi	VDS=15V, VGS=4,5V, IDS=8A	---	5.2	---	nC
Qgse	Gate-Source to'lovi		---	1.0	---
Qgde	Darvoza-Drenaj zaryadi		---	2.8	---
Td(on)e	Kechikish vaqti	VDD=15V,RL=15R, IDS=1A,VGEN=10V, RG=6R.	---	6	---	ns
Tre	Ko'tarilish vaqti		---	8.6	---
Td(off)e	O'chirishni kechiktirish vaqti		---	16	---
Tfe	Kuz vaqti		---	3.6	---
Sisse	Kirish sig'imi	VDS=15V , VGS=0V , f=1MHz	---	545	---	pF
Kosse	Chiqish sig'imi		---	95	---
Crsse	Teskari uzatish sig'imi		---	55	---