WSD3023DN56 N-Ch va P-kanal 30V/-30V 14A/-12A DFN5*6-8 WINSOK MOSFET
Umumiy tavsif
WSD3023DN56 - bu juda yuqori hujayra zichligiga ega bo'lgan N-ch va P-ch MOSFET-larning eng yuqori mahsuldorligi bo'lib, ular ko'pchilik sinxron konvertor ilovalari uchun mukammal RDSON va eshik zaryadini ta'minlaydi. WSD3023DN56 RoHS va Yashil mahsulot talablariga javob beradi, 100% EAS kafolatlangan, to'liq funksiya ishonchliligi tasdiqlangan.
Xususiyatlari
Kengaytirilgan yuqori hujayra zichligi Xandaq texnologiyasi, Super Past Gate zaryadi, Zo'r CdV / dt effektining pasayishi, 100% EAS kafolati, Yashil qurilma mavjud.
Ilovalar
MB/NB/UMPC/VGA uchun yuqori chastotali yuklanish nuqtasi sinxron konvertor, DC-DC tarmoq quvvat tizimi, CCFL orqa yorug'lik inverteri, dronlar, motorlar, avtomobil elektronikasi, asosiy jihozlar.
tegishli material raqami
PANJIT PJQ5606
Muhim parametrlar
| Belgi | Parametr | Reyting | Birliklar | |
| N-Ch | P-Ch | |||
| VDS | Drenaj manbai kuchlanishi | 30 | -30 | V |
| VGS | Darvoza manba kuchlanishi | ±20 | ±20 | V |
| ID | Uzluksiz drenaj oqimi, VGS(NP)=10V,Ta=25℃ | 14* | -12 | A |
| Uzluksiz drenaj oqimi, VGS(NP)=10V,Ta=70℃ | 7.6 | -9.7 | A | |
| IDP a | Impulsli drenaj oqimi sinovdan o'tkazildi, VGS(NP)=10V | 48 | -48 | A |
| EAS c | Ko'chki energiyasi, Yagona zarba, L = 0,5 mH | 20 | 20 | mJ |
| IAS c | Ko'chki oqimi, Yagona impuls , L = 0,5 mH | 9 | -9 | A |
| PD | Umumiy quvvat sarfi, Ta = 25 ℃ | 5.25 | 5.25 | W |
| TSTG | Saqlash harorati oralig'i | -55 dan 175 gacha | -55 dan 175 gacha | ℃ |
| TJ | Ishlash birlashmasining harorat diapazoni | 175 | 175 | ℃ |
| RqJA b | Issiqlik qarshiligi - atrof-muhitga ulanish, barqaror holat | 60 | 60 | ℃/Vt |
| RqJC | Issiqlik qarshiligi - korpusga ulanish, barqaror holat | 6.25 | 6.25 | ℃/Vt |
| Belgi | Parametr | Shartlar | Min. | Tip. | Maks. | Birlik |
| BVDSS | Drenaj manbasining buzilishi kuchlanishi | VGS=0V , ID=250uA | 30 | --- | --- | V |
| RDS(ON)d | Statik drenaj manbai - qarshilik | VGS=10V , ID=8A | --- | 14 | 18.5 | mŌ |
| VGS=4,5V , ID=5A | --- | 17 | 25 | |||
| VGS(th) | Eshik chegarasi kuchlanishi | VGS=VDS , ID =250uA | 1.3 | 1.8 | 2.3 | V |
| IDSS | Drenaj manbasining qochqin oqimi | VDS=20V , VGS=0V , TJ=25℃ | --- | --- | 1 | uA |
| VDS=20V , VGS=0V , TJ=85℃ | --- | --- | 30 | |||
| IGSS | Darvoza manbasining qochqin oqimi | VGS=±20V , VDS=0V | --- | --- | ±100 | nA |
| Rg | Darvoza qarshiligi | VDS=0V , VGS=0V , f=1MHz | --- | 1.7 | 3.4 | Ω |
| Qge | Darvozaning umumiy to'lovi | VDS=15V, VGS=4,5V, IDS=8A | --- | 5.2 | --- | nC |
| Qgse | Gate-Source to'lovi | --- | 1.0 | --- | ||
| Qgde | Darvoza-Drenaj zaryadi | --- | 2.8 | --- | ||
| Td(on)e | Kechikish vaqti | VDD=15V,RL=15R, IDS=1A,VGEN=10V, RG=6R. | --- | 6 | --- | ns |
| Tre | Ko'tarilish vaqti | --- | 8.6 | --- | ||
| Td(off)e | O'chirishni kechiktirish vaqti | --- | 16 | --- | ||
| Tfe | Kuz vaqti | --- | 3.6 | --- | ||
| Sisse | Kirish sig'imi | VDS=15V , VGS=0V , f=1MHz | --- | 545 | --- | pF |
| Kosse | Chiqish sig'imi | --- | 95 | --- | ||
| Crsse | Teskari uzatish sig'imi | --- | 55 | --- |
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