WSD30150DN56 N-kanal 30V 150A DFN5X6-8 WINSOK MOSFET

mahsulotlar

WSD30150DN56 N-kanal 30V 150A DFN5X6-8 WINSOK MOSFET

qisqacha tavsif:

Qism raqami:WSD30150DN56

BVDSS:30V

ID:150A

RDSON:1,8 mŌ 

Kanal:N-kanal

Paket:DFN5X6-8


Mahsulot detali

Ilova

Mahsulot teglari

WINSOK MOSFET mahsulotiga umumiy nuqtai

WSD30150DN56 MOSFET kuchlanishi 30V, oqim 150A, qarshilik 1,8mŌ, kanal N-kanal va paket DFN5X6-8.

WINSOK MOSFET dastur sohalari

E-sigaretalar MOSFET, simsiz zaryadlovchi MOSFET, dronlar MOSFET, tibbiy yordam MOSFET, avtomobil zaryadlovchi MOSFET, kontroller MOSFET, raqamli mahsulotlar MOSFET, kichik maishiy texnika MOSFET, maishiy elektronika MOSFET.

WINSOK MOSFET boshqa markali materiallar raqamlariga mos keladi

AOS MOSFET AON6512, AONS3234.

Onsemi, FAIRCHILD MOSFET FDMC81DCCM.

NXP MOSFET PSMN1R7-3YL.

TOSHIBA MOSFET TPH1R43NL.

PANJIT MOSFET PJQ5428.

NIKO-SEM MOSFET PKC26BB, PKE24BB.

POTENS yarimo'tkazgich MOSFET PDC392X.

MOSFET parametrlari

Belgi

Parametr

Reyting

Birliklar

VDS

Drenaj manbai kuchlanishi

30

V

VGS

Gate-Source kuchlanish

±20

V

ID@TC=25

Uzluksiz drenaj oqimi, VGS@ 10V1,7

150

A

ID@TC=100

Uzluksiz drenaj oqimi, VGS@ 10V1,7

83

A

IDM

Impulsli drenaj oqimi2

200

A

EAS

Yagona pulsli ko'chki energiyasi3

125

mJ

IAS

Ko'chki oqimi

50

A

PD@TC=25

Umumiy quvvat sarfi4

62.5

W

TSTG

Saqlash harorati oralig'i

-55 dan 150 gacha

TJ

Ishlash birlashmasining harorat diapazoni

-55 dan 150 gacha

 

Belgi

Parametr

Shartlar

Min.

Tip.

Maks.

Birlik

BVDSS

Drenaj manbasining buzilishi kuchlanishi VGS=0V, ID=250uA

30

---

---

V

BVDSS/△TJ

BVDSSHarorat koeffitsienti 25 ga havola, ID=1mA

---

0,02

---

V/

RDS(ON)

Statik drenaj manbai - qarshilik2 VGS=10V, ID=20A

---

1.8

2.4 mΩ
VGS=4,5V, ID=15A  

2.4

3.2

VGS(th)

Eshik chegarasi kuchlanishi VGS=VDS, ID=250uA

1.4

1.7

2.5

V

VGS(th)

VGS(th)Harorat koeffitsienti

---

-6.1

---

mV/

IDSS

Drenaj manbasining qochqin oqimi VDS=24V, VGS=0V, TJ=25

---

---

1

uA

VDS=24V, VGS=0V, TJ=55

---

---

5

IGSS

Darvoza manbasining qochqin oqimi VGS=±20V, VDS=0V

---

---

±100

nA

gfs

Oldinga o'tkazuvchanlik VDS=5V, ID=10A

---

27

---

S

Rg

Darvoza qarshiligi VDS=0V, VGS=0V , f=1MHz

---

0,8

1.5

Ω

Qg

Darvozaning umumiy zaryadi (4,5V) VDS=15V, VGS=4,5V, ID=30A

---

26

---

nC

Qgs

Gate-Source to'lovi

---

9.5

---

Qgd

Darvoza-Drenaj zaryadi

---

11.4

---

Td(yoqilgan)

Kechikish vaqti VDD=15V, VGEN=10V, RG=6Ω, ID=1A, RL=15Ō.

---

20

---

ns

Tr

Ko'tarilish vaqti

---

12

---

Td(yopiq)

O'chirishni kechiktirish vaqti

---

69

---

Tf

Kuz vaqti

---

29

---

Ciss

Kirish sig'imi VDS=15V, VGS=0V , f=1MHz 2560 3200

3850

pF

Coss

Chiqish sig'imi

560

680

800

Crss

Teskari uzatish sig'imi

260

320

420


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