WSD25280DN56G N-kanal 25V 280A DFN5X6-8 WINSOK MOSFET
WINSOK MOSFET mahsulotiga umumiy nuqtai
WSD25280DN56G MOSFET kuchlanishi 25V, oqim 280A, qarshilik 0,7mŌ, kanal N-kanal va paket DFN5X6-8.
WINSOK MOSFET dastur sohalari
Yuqori chastotali yuklanish nuqtasi sinxron、Buk konvertori、Tarmoq DC-DC quvvat tizimi、Quvvat asboblari ilovasi,Elektron sigaretalar MOSFET, simsiz zaryadlovchi MOSFET, dronlar MOSFET, tibbiy yordam MOSFET, avtomobil zaryadlovchi qurilmalari MOSFET, MOSFET kontrollerlari, raqamli mahsulotlar MOSFET, kichik maishiy texnika MOSFET, maishiy elektronika MOSFET.
WINSOK MOSFET boshqa markali materiallar raqamlariga mos keladi
Nxperian MOSFET PSMN1R-4ULD.
POTENS yarimo'tkazgich MOSFET PDC262X.
MOSFET parametrlari
Belgi | Parametr | Reyting | Birliklar |
VDS | Drenaj manbai kuchlanishi | 25 | V |
VGS | Gate-Source kuchlanish | ±20 | V |
ID@TC=25℃ | Uzluksiz drenaj oqimi(Silicon Limited)1,7 | 280 | A |
ID@TC=70℃ | Uzluksiz drenaj oqimi (Silicon Limited)1,7 | 190 | A |
IDM | Impulsli drenaj oqimi2 | 600 | A |
EAS | Yagona pulsli ko'chki energiyasi3 | 1200 | mJ |
IAS | Ko'chki oqimi | 100 | A |
PD@TC=25℃ | Umumiy quvvat sarfi4 | 83 | W |
TSTG | Saqlash harorati oralig'i | -55 dan 150 gacha | ℃ |
TJ | Ishlash birlashmasining harorat diapazoni | -55 dan 150 gacha | ℃ |
Belgi | Parametr | Shartlar | Min. | Tip. | Maks. | Birlik |
BVDSS | Drenaj manbasining buzilishi kuchlanishi | VGS=0V, ID=250uA | 25 | --- | --- | V |
△BVDSS/△TJ | BVDSSHarorat koeffitsienti | 25 ga havola℃, ID=1mA | --- | 0,022 | --- | V/℃ |
RDS(ON) | Statik drenaj manbai - qarshilik2 | VGS=10V, ID=20A | --- | 0,7 | 0,9 | mΩ |
VGS=4,5V, ID=20A | --- | 1.4 | 1.9 | |||
VGS(th) | Eshik chegarasi kuchlanishi | VGS=VDS, ID=250uA | 1.0 | --- | 2.5 | V |
△VGS(th) | VGS(th)Harorat koeffitsienti | --- | -6.1 | --- | mV/℃ | |
IDSS | Drenaj manbasining qochqin oqimi | VDS=20V, VGS=0V, TJ=25℃ | --- | --- | 1 | uA |
VDS=20V, VGS=0V, TJ=55℃ | --- | --- | 5 | |||
IGSS | Darvoza manbasining qochqin oqimi | VGS=±20V, VDS=0V | --- | --- | ±100 | nA |
gfs | Oldinga o'tkazuvchanlik | VDS=5V, ID=10A | --- | 40 | --- | S |
Rg | Darvoza qarshiligi | VDS=0V, VGS=0V , f=1MHz | --- | 3.8 | 1.5 | Ω |
Qg | Darvozaning umumiy zaryadi (4,5V) | VDS=15V, VGS=4,5V, ID=20A | --- | 72 | --- | nC |
Qgs | Gate-Source to'lovi | --- | 18 | --- | ||
Qgd | Darvoza-Drenaj zaryadi | --- | 24 | --- | ||
Td(yoqilgan) | Kechikish vaqti | VDD=15V, VGEN=10V, RG=1Ω, ID=10A | --- | 33 | --- | ns |
Tr | Ko'tarilish vaqti | --- | 55 | --- | ||
Td(yopiq) | O'chirishni kechiktirish vaqti | --- | 62 | --- | ||
Tf | Kuz vaqti | --- | 22 | --- | ||
Ciss | Kirish sig'imi | VDS=15V, VGS=0V , f=1MHz | --- | 7752 | --- | pF |
Coss | Chiqish sig'imi | --- | 1120 | --- | ||
Crss | Teskari uzatish sig'imi | --- | 650 | --- |