WSD25280DN56G N-kanal 25V 280A DFN5X6-8 WINSOK MOSFET

mahsulotlar

WSD25280DN56G N-kanal 25V 280A DFN5X6-8 WINSOK MOSFET

qisqa Tasvir:

Qism raqami:WSD25280DN56G

BVDSS:25V

ID:280A

RDSON:0,7 mŌ 

Kanal:N-kanal

Paket:DFN5X6-8


Mahsulot detali

Ilova

Mahsulot teglari

WINSOK MOSFET mahsulotiga umumiy nuqtai

WSD25280DN56G MOSFET kuchlanishi 25V, oqim 280A, qarshilik 0,7mŌ, kanal N-kanal va paket DFN5X6-8.

WINSOK MOSFET dastur sohalari

Yuqori chastotali yuklanish nuqtasi sinxronBuk konvertoriTarmoq DC-DC quvvat tizimiQuvvat asboblari ilovasi,Elektron sigaretalar MOSFET, simsiz zaryadlovchi MOSFET, dronlar MOSFET, tibbiy yordam MOSFET, avtomobil zaryadlovchi qurilmalari MOSFET, MOSFET kontrollerlari, raqamli mahsulotlar MOSFET, kichik maishiy texnika MOSFET, maishiy elektronika MOSFET.

WINSOK MOSFET boshqa markali materiallar raqamlariga mos keladi

Nxperian MOSFET PSMN1R-4ULD.

POTENS yarimo'tkazgich MOSFET PDC262X.

MOSFET parametrlari

Belgi

Parametr

Reyting

Birliklar

VDS

Drenaj manbai kuchlanishi

25

V

VGS

Gate-Source kuchlanish

±20

V

ID@TC=25

Uzluksiz drenaj oqimiSilicon Limited)1,7

280

A

ID@TC=70

Uzluksiz drenaj oqimi (Silicon Limited)1,7

190

A

IDM

Impulsli drenaj oqimi2

600

A

EAS

Yagona pulsli ko'chki energiyasi3

1200

mJ

IAS

Ko'chki oqimi

100

A

PD@TC=25

Umumiy quvvat sarfi4

83

W

TSTG

Saqlash harorati oralig'i

-55 dan 150 gacha

TJ

Ishlash birlashmasining harorat diapazoni

-55 dan 150 gacha

 

Belgi

Parametr

Shartlar

Min.

Tip.

Maks.

Birlik

BVDSS

Drenaj manbasining buzilishi kuchlanishi VGS=0V, ID=250uA

25

---

---

V

BVDSS/△TJ

BVDSSHarorat koeffitsienti 25 ga havola, ID=1mA

---

0,022

---

V/

RDS(ON)

Statik drenaj manbai - qarshilik2 VGS=10V, ID=20A

---

0,7

0,9 mΩ
VGS=4,5V, ID=20A

---

1.4

1.9

VGS(th)

Eshik chegarasi kuchlanishi VGS=VDS, ID=250uA

1.0

---

2.5

V

VGS(th)

VGS(th)Harorat koeffitsienti

---

-6.1

---

mV/

IDSS

Drenaj manbasining qochqin oqimi VDS=20V, VGS=0V, TJ=25

---

---

1

uA

VDS=20V, VGS=0V, TJ=55

---

---

5

IGSS

Darvoza manbasining qochqin oqimi VGS=±20V, VDS=0V

---

---

±100

nA

gfs

Oldinga o'tkazuvchanlik VDS=5V, ID=10A

---

40

---

S

Rg

Darvoza qarshiligi VDS=0V, VGS=0V , f=1MHz

---

3.8

1.5

Ω

Qg

Darvozaning umumiy zaryadi (4,5V) VDS=15V, VGS=4,5V, ID=20A

---

72

---

nC

Qgs

Gate-Source to'lovi

---

18

---

Qgd

Darvoza-Drenaj zaryadi

---

24

---

Td(yoqilgan)

Kechikish vaqti VDD=15V, VGEN=10V, RG=1Ω, ID=10A

---

33

---

ns

Tr

Ko'tarilish vaqti

---

55

---

Td(yopiq)

O'chirishni kechiktirish vaqti

---

62

---

Tf

Kuz vaqti

---

22

---

Ciss

Kirish sig'imi VDS=15V, VGS=0V , f=1MHz

---

7752

---

pF

Coss

Chiqish sig'imi

---

1120

---

Crss

Teskari uzatish sig'imi

---

650

---

 

 


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