WSD20L120DN56 P-kanal -20V -120A DFN5*6-8 WINSOK MOSFET
Umumiy tavsif
WSD20L120DN56 yuqori zichlikdagi hujayra tuzilishiga ega bo'lgan yuqori samarali P-Ch MOSFET bo'lib, ko'pchilik sinxron pul konvertorlari uchun ajoyib RDSON va eshik zaryadini beradi.WSD20L120DN56 RoHS va ekologik toza mahsulotlar uchun 100% EAS talablariga javob beradi, to'liq funksiyali ishonchlilik tasdiqlanadi.
Xususiyatlari
1, Kengaytirilgan yuqori hujayra zichligi Trench texnologiyasi
2, Super past eshik zaryadi
3, Zo'r CdV / dt effektining pasayishi
4, 100% EAS kafolatlangan 5, yashil qurilma mavjud
Ilovalar
MB/NB/UMPC/VGA uchun yuqori chastotali yuklanish nuqtasi sinxron konvertori, tarmoq DC-DC quvvat tizimi, yuk o'tkazgich, elektron sigaret, simsiz zaryadlovchi, motorlar, dronlar, tibbiy, avtomobil zaryadlovchi, boshqaruvchi, raqamli mahsulotlar, Kichik maishiy texnika, maishiy elektronika.
tegishli material raqami
AOS AON6411, NIKO PK5A7BA
Muhim parametrlar
| Belgi | Parametr | Reyting | Birliklar | |
| 10s | Barqaror holat | |||
| VDS | Drenaj manbai kuchlanishi | -20 | V | |
| VGS | Darvoza manba kuchlanishi | ±10 | V | |
| ID@TC=25℃ | Uzluksiz drenaj oqimi, VGS @ -10V1 | -120 | A | |
| ID@TC=100℃ | Uzluksiz drenaj oqimi, VGS @ -10V1 | -69,5 | A | |
| ID@TA=25℃ | Uzluksiz drenaj oqimi, VGS @ -10V1 | -25 | -22 | A |
| ID@TA=70℃ | Uzluksiz drenaj oqimi, VGS @ -10V1 | -24 | -18 | A |
| IDM | Impulsli drenaj oqimi2 | -340 | A | |
| EAS | Yagona impulsli ko‘chki energiyasi3 | 300 | mJ | |
| IAS | Ko'chki oqimi | -36 | A | |
| PD@TC=25℃ | Umumiy quvvat sarfi4 | 130 | W | |
| PD@TA=25℃ | Umumiy quvvat sarfi4 | 6.8 | 6.25 | W |
| TSTG | Saqlash harorati oralig'i | -55 dan 150 gacha | ℃ | |
| TJ | Ishlash birlashmasining harorat diapazoni | -55 dan 150 gacha | ℃ | |
| Belgi | Parametr | Shartlar | Min. | Tip. | Maks. | Birlik |
| BVDSS | Drenaj manbasining buzilishi kuchlanishi | VGS=0V , ID=-250uA | -20 | --- | --- | V |
| △BVDSS/△TJ | BVDSS harorat koeffitsienti | 25℃ ga havola, ID=-1mA | --- | -0,0212 | --- | V/℃ |
| RDS(ON) | Statik drenaj manbai - qarshilik 2 | VGS=-4,5V , ID=-20A | --- | 2.1 | 2.7 | mŌ |
| VGS=-2,5V , ID=-20A | --- | 2.8 | 3.7 | |||
| VGS(th) | Eshik chegarasi kuchlanishi | VGS=VDS , ID =-250uA | -0,4 | -0,6 | -1,0 | V |
| △VGS(th) | VGS(th) harorat koeffitsienti | --- | 4.8 | --- | mV/℃ | |
| IDSS | Drenaj manbasining qochqin oqimi | VDS=-20V , VGS=0V , TJ=25℃ | --- | --- | -1 | uA |
| VDS=-20V , VGS=0V , TJ=55℃ | --- | --- | -6 | |||
| IGSS | Darvoza manbasining qochqin oqimi | VGS=±20V , VDS=0V | --- | --- | ±100 | nA |
| gfs | Oldinga o'tkazuvchanlik | VDS=-5V , ID=-20A | --- | 100 | --- | S |
| Rg | Darvoza qarshiligi | VDS=0V , VGS=0V , f=1MHz | --- | 2 | 5 | Ω |
| Qg | Darvozaning umumiy zaryadi (-4,5V) | VDS=-10V , VGS=-4.5V , ID=-20A | --- | 100 | --- | nC |
| Qgs | Gate-Source to'lovi | --- | 21 | --- | ||
| Qgd | Darvoza-Drenaj zaryadi | --- | 32 | --- | ||
| Td(yoqilgan) | Kechikish vaqti | VDD=-10V , VGEN=-4.5V , RG=3Ō ID=-1A ,RL=0,5Ō | --- | 20 | --- | ns |
| Tr | Ko'tarilish vaqti | --- | 50 | --- | ||
| Td(yopiq) | O'chirishni kechiktirish vaqti | --- | 100 | --- | ||
| Tf | Kuz vaqti | --- | 40 | --- | ||
| Ciss | Kirish sig'imi | VDS=-10V , VGS=0V , f=1MHz | --- | 4950 | --- | pF |
| Coss | Chiqish sig'imi | --- | 380 | --- | ||
| Crss | Teskari uzatish sig'imi | --- | 290 | --- |
