WSD20L120DN56 P-kanal -20V -120A DFN5*6-8 WINSOK MOSFET
Umumiy tavsif
WSD20L120DN56 yuqori zichlikdagi hujayra tuzilishiga ega bo'lgan yuqori samarali P-Ch MOSFET bo'lib, ko'pchilik sinxron pul konvertorlari uchun ajoyib RDSON va eshik zaryadini beradi. WSD20L120DN56 RoHS va ekologik toza mahsulotlar uchun 100% EAS talablariga javob beradi, to'liq funksiyali ishonchlilik tasdiqlanadi.
Xususiyatlari
1, Kengaytirilgan yuqori hujayra zichligi Trench texnologiyasi
2, Super past eshik zaryadi
3, Zo'r CdV / dt effektining pasayishi
4, 100% EAS kafolatlangan 5, Yashil qurilma mavjud
Ilovalar
MB/NB/UMPC/VGA uchun yuqori chastotali yuklanish nuqtasini sinxronlash konvertori, tarmoq DC-DC quvvat tizimi, yuklash kaliti, elektron sigaret, simsiz zaryadlovchi, motorlar, dronlar, tibbiy, avtomobil zaryadlovchi, boshqaruvchi, raqamli mahsulotlar, Kichik maishiy texnika, maishiy elektronika.
tegishli material raqami
AOS AON6411, NIKO PK5A7BA
Muhim parametrlar
Belgi | Parametr | Reyting | Birliklar | |
10s | Barqaror holat | |||
VDS | Drenaj manbai kuchlanishi | -20 | V | |
VGS | Darvoza manba kuchlanishi | ±10 | V | |
ID@TC=25℃ | Uzluksiz drenaj oqimi, VGS @ -10V1 | -120 | A | |
ID@TC=100℃ | Uzluksiz drenaj oqimi, VGS @ -10V1 | -69,5 | A | |
ID@TA=25℃ | Uzluksiz drenaj oqimi, VGS @ -10V1 | -25 | -22 | A |
ID@TA=70℃ | Uzluksiz drenaj oqimi, VGS @ -10V1 | -24 | -18 | A |
IDM | Impulsli drenaj oqimi2 | -340 | A | |
EAS | Yagona pulsli ko‘chki energiyasi3 | 300 | mJ | |
IAS | Ko'chki oqimi | -36 | A | |
PD@TC=25℃ | Umumiy quvvat sarfi4 | 130 | W | |
PD@TA=25℃ | Umumiy quvvat sarfi4 | 6.8 | 6.25 | W |
TSTG | Saqlash harorati oralig'i | -55 dan 150 gacha | ℃ | |
TJ | Ishlash birlashmasining harorat diapazoni | -55 dan 150 gacha | ℃ |
Belgi | Parametr | Shartlar | Min. | Tip. | Maks. | Birlik |
BVDSS | Drenaj manbasining buzilishi kuchlanishi | VGS=0V , ID=-250uA | -20 | --- | --- | V |
△BVDSS/△TJ | BVDSS harorat koeffitsienti | 25℃ ga havola, ID=-1mA | --- | -0,0212 | --- | V/℃ |
RDS(ON) | Statik drenaj manbai - qarshilik 2 | VGS=-4,5V , ID=-20A | --- | 2.1 | 2.7 | mŌ |
VGS=-2,5V , ID=-20A | --- | 2.8 | 3.7 | |||
VGS(th) | Eshik chegarasi kuchlanishi | VGS=VDS , ID =-250uA | -0,4 | -0,6 | -1,0 | V |
△VGS(th) | VGS(th) harorat koeffitsienti | --- | 4.8 | --- | mV/℃ | |
IDSS | Drenaj manbasining qochqin oqimi | VDS=-20V , VGS=0V , TJ=25℃ | --- | --- | -1 | uA |
VDS=-20V , VGS=0V , TJ=55℃ | --- | --- | -6 | |||
IGSS | Darvoza manbasining qochqin oqimi | VGS=±20V , VDS=0V | --- | --- | ±100 | nA |
gfs | Oldinga o'tkazuvchanlik | VDS=-5V , ID=-20A | --- | 100 | --- | S |
Rg | Darvoza qarshiligi | VDS=0V , VGS=0V , f=1MHz | --- | 2 | 5 | Ω |
Qg | Darvozaning umumiy zaryadi (-4,5V) | VDS=-10V , VGS=-4.5V , ID=-20A | --- | 100 | --- | nC |
Qgs | Gate-Source to'lovi | --- | 21 | --- | ||
Qgd | Darvoza-Drenaj zaryadi | --- | 32 | --- | ||
Td(yoqilgan) | Kechikish vaqti | VDD=-10V , VGEN=-4.5V , RG=3Ō ID=-1A ,RL=0,5Ō | --- | 20 | --- | ns |
Tr | Ko'tarilish vaqti | --- | 50 | --- | ||
Td(yopiq) | O'chirishni kechiktirish vaqti | --- | 100 | --- | ||
Tf | Kuz vaqti | --- | 40 | --- | ||
Ciss | Kirish sig'imi | VDS=-10V , VGS=0V , f=1MHz | --- | 4950 | --- | pF |
Coss | Chiqish sig'imi | --- | 380 | --- | ||
Crss | Teskari uzatish sig'imi | --- | 290 | --- |