WSD2090DN56 N-kanal 20V 80A DFN5*6-8 WINSOK MOSFET
Umumiy tavsif
WSD2090DN56 - bu juda yuqori hujayra zichligiga ega bo'lgan eng yuqori samarali N-Ch MOSFET xandaqi bo'lib, u ko'pchilik sinxron konvertor ilovalari uchun mukammal RDSON va eshik zaryadini ta'minlaydi. WSD2090DN56 RoHS va Yashil mahsulot talablariga javob beradi, 100% EAS kafolatlangan, to'liq funksiya ishonchliligi tasdiqlangan.
Xususiyatlari
Kengaytirilgan yuqori hujayra zichligi Trench texnologiyasi, Super Low Gate Charge, Zo'r CdV / dt effektining pasayishi, 100% EAS kafolati, Yashil qurilma mavjud
Ilovalar
Kalit, quvvat tizimi, yuk o'tkazgich, elektron sigaretalar, dronlar, elektr asboblar, fasya qurollari, PD, kichik maishiy texnika va boshqalar.
tegishli material raqami
AOS AON6572
Muhim parametrlar
Mutlaq maksimal reytinglar (boshqacha belgilanmagan bo'lsa, TC = 25 ℃)
| Belgi | Parametr | Maks. | Birliklar |
| VDSS | Drenaj manbai kuchlanishi | 20 | V |
| VGSS | Darvoza manba kuchlanishi | ±12 | V |
| ID@TC=25℃ | Uzluksiz drenaj oqimi, VGS @ 10V1 | 80 | A |
| ID@TC=100℃ | Uzluksiz drenaj oqimi, VGS @ 10V1 | 59 | A |
| IDM | Impulsli drenaj joriy eslatma1 | 360 | A |
| EAS | Yagona impulsli ko‘chki energiyasi eslatmasi2 | 110 | mJ |
| PD | Quvvatning tarqalishi | 81 | W |
| RJA | Issiqlik qarshiligi, korpusga ulanish | 65 | ℃/Vt |
| RJC | Issiqlik qarshiligi ulanishi - 1-qism | 4 | ℃/Vt |
| TJ, TSTG | Ishlash va saqlash harorati diapazoni | -55 dan +175 gacha | ℃ |
Elektr xususiyatlari (TJ = 25 ℃, boshqacha ko'rsatilmagan bo'lsa)
| Belgi | Parametr | Shartlar | Min | Tip | Maks | Birliklar |
| BVDSS | Drenaj manbasining buzilishi kuchlanishi | VGS=0V, ID=250mkA | 20 | 24 | --- | V |
| △BVDSS/△TJ | BVDSS harorat koeffitsienti | 25℃ ga havola, ID=1mA | --- | 0,018 | --- | V/℃ |
| VGS(th) | Eshik chegarasi kuchlanishi | VDS = VGS, ID = 250 mkA | 0,50 | 0,65 | 1.0 | V |
| RDS(ON) | Statik drenaj manbai - qarshilik | VGS=4,5V, ID=30A | --- | 2.8 | 4.0 | mŌ |
| RDS(ON) | Statik drenaj manbai - qarshilik | VGS=2,5V, ID=20A | --- | 4.0 | 6.0 | |
| IDSS | Nolinchi eshik kuchlanishining drenaj oqimi | VDS=20V,VGS=0V | --- | --- | 1 | mA |
| IGSS | Darvoza tanasining qochqin oqimi | VGS=±10V, VDS=0V | --- | --- | ±100 | nA |
| Ciss | Kirish sig'imi | VDS=10V,VGS=0V,f=1MHZ | --- | 3200 | --- | pF |
| Coss | Chiqish sig'imi | --- | 460 | --- | ||
| Crss | Teskari uzatish sig'imi | --- | 446 | --- | ||
| Qg | Darvozaning umumiy to'lovi | VGS=4,5V,VDS=10V,ID=30A | --- | 11.05 | --- | nC |
| Qgs | Gate-Source to'lovi | --- | 1.73 | --- | ||
| Qgd | Darvoza-Drenaj zaryadi | --- | 3.1 | --- | ||
| tD(yoqilgan) | Kechikish vaqti | VGS=4.5V, VDS=10V, ID=30ARGEN=1.8ũ | --- | 9.7 | --- | ns |
| tr | Yoqish vaqti | --- | 37 | --- | ||
| tD (yopiq) | O'chirishni kechiktirish vaqti | --- | 63 | --- | ||
| tf | O'chirish kuz vaqti | --- | 52 | --- | ||
| VSD | Diod oldinga kuchlanish | IS=7,6A,VGS=0V | --- | --- | 1.2 | V |
Xabaringizni shu yerga yozing va bizga yuboring
