WSD100N15DN56G N-kanal 150V 100A DFN5X6-8 WINSOK MOSFET
WINSOK MOSFET mahsulotiga umumiy nuqtai
WSD100N15DN56G MOSFET kuchlanishi 150V, oqim 100A, qarshilik 6mŌ, kanal N-kanal va paket DFN5X6-8.
WINSOK MOSFET dastur sohalari
Tibbiy quvvat manbalari MOSFET, PD MOSFET, dronlar MOSFET, elektron sigaretalar MOSFET, asosiy jihozlar MOSFET va elektr asboblari MOSFET.
MOSFET parametrlari
Belgi | Parametr | Reyting | Birliklar |
VDS | Drenaj manbai kuchlanishi | 150 | V |
VGS | Darvoza manba kuchlanishi | ±20 | V |
ID | Uzluksiz drenaj oqimi, VGS@ 10V (TC=25℃) | 100 | A |
IDM | Impulsli drenaj oqimi | 360 | A |
EAS | Yagona pulsli ko'chki energiyasi | 400 | mJ |
PD | Umumiy quvvat sarfi...C=25℃) | 160 | W |
RJA | Issiqlik qarshiligi, birlashma-muhit | 62 | ℃/Vt |
RJC | Issiqlik qarshiligi, birlashma korpusi | 0,78 | ℃/Vt |
TSTG | Saqlash harorati oralig'i | -55 dan 175 gacha | ℃ |
TJ | Ishlash birlashmasining harorat diapazoni | -55 dan 175 gacha | ℃ |
Belgi | Parametr | Shartlar | Min. | Tip. | Maks. | Birlik |
BVDSS | Drenaj manbasining buzilishi kuchlanishi | VGS=0V, ID=250uA | 150 | --- | --- | V |
RDS(ON) | Statik drenaj manbai - qarshilik2 | VGS=10V, ID=20A | --- | 9 | 12 | mŌ |
VGS(th) | Eshik chegarasi kuchlanishi | VGS=VDS, ID=250uA | 2.0 | 3.0 | 4.0 | V |
IDSS | Drenaj manbasining qochqin oqimi | VDS=100V, VGS=0V, TJ=25 ℃ | --- | --- | 1 | uA |
IGSS | Darvoza manbasining qochqin oqimi | VGS=±20V, VDS=0V | --- | --- | ±100 | nA |
Qg | Darvozaning umumiy to'lovi | VDS=50V, VGS=10V, ID=20A | --- | 66 | --- | nC |
Qgs | Gate-Source to'lovi | --- | 26 | --- | ||
Qgd | Darvoza-Drenaj zaryadi | --- | 18 | --- | ||
Td(yoqilgan) | Kechikish vaqti | VDD=50V,VGS=10V RG=2Ō, ID=20A | --- | 37 | --- | ns |
Tr | Ko'tarilish vaqti | --- | 98 | --- | ||
Td(yopiq) | O'chirishni kechiktirish vaqti | --- | 55 | --- | ||
Tf | Kuz vaqti | --- | 20 | --- | ||
Ciss | Kirish sig'imi | VDS=30V, VGS=0V , f=1MHz | --- | 5450 | --- | pF |
Coss | Chiqish sig'imi | --- | 1730 | --- | ||
Crss | Teskari uzatish sig'imi | --- | 195 | --- |